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参数资料
| 型号： | SIHVM7.5 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.5 A, SILICON, SIGNAL DIODE |
| 文件页数： | 5/14页 |
| 文件大小： | 98K |
| 代理商： | SIHVM7.5 |
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 249798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
tSENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 966, REV. -
HIGH VOLTAGE, HIGH DENSITY, FAST RECOVERY
INDUSTRIAL GRADE MODULAR RECTIFIER ASSEMBLY
FEATURES:
Up to 15kV reverse voltage
V
R = 2500V – 15000V
Low reverse leakage current
I
F = 0.8 – 2.0A (air)
High thermal shock resistance
I
R = 1.0A
Modular construction
I
FSM = 50A
Provides design versatility
Absolute Maximum Ratings
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
(PIV)
MAX. AVG.
DC
OUTPUT
CURRENT
(AIR)
IF(AV)
Amps
STUD TO
HEAT-
SINK
@ 25
°C
IN STILL
OIL
@ 55
°C
1 CYCLE SURGE
CURRENT IFSM
tp = 8.3ms
_____________
Amps
REPETITIVE
SURGE
CURRENT
IFRM @ 25
°C
I
2t
tp = 8.3ms
@25
°C
Volts
25
°C
100
°C
Amps
25
°C
Amps
A
2S
SI2HVM2.5
SI2HVM5
SI2HVM7.5
SI2HVM10
SI2HVM12.5
SI2HVM15
2500
5000
7500
10000
12500
15000
2.0
1.2
1.0
0.8
0.5
0.4
0.3
2.0
1.5
2.0
50
12.0
10.0
MAXIMUM THERMAL IMPEDANCES
Junction to Ambient
RθJC < 12°C/W
Junction to Stud
RθJS < 6°C/W
Junction to Oil
RθJO < 4.5°C/W
Electrical Characteristics
TYPE
NUMBER
MAXIMUM
REVERSE
CURRENT
@ PIV
IR
Amps
MAXIMUM
PEAK
FORWARD
VOLTAGE
VF @ IF
@ 25
°C
MAXIMUM
REVERSE
RECOVERY
TIME
trr @ 25
°C
25
°C
100
°C
V
A
sec
SI2HVM2.5
SI2HVM5
SI2HVM7.5
SI2HVM10
SI2HVM12.5
SI2HVM15
1.0
20
3.3
5.5
8.8
11.1
14.4
16.6
2.0
2.5
Notes:
- Operating temperature range –40 to +125°C.
- Storage temperature range –40 to +125°C.
(Temperature range is given for Hermetic Diodes)
Measured on discrete devices prior to assembly.
SI2HVM2.5
SI2HVM10
SI2HVM5
SI2HVM12.5
SI2HVM7.5
SI2HVM15
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| SICH20000 | 0.5 A, SILICON, SIGNAL DIODE |
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| SICH12500 | 0.5 A, SILICON, SIGNAL DIODE |
| SICF12500 | 0.5 A, SILICON, SIGNAL DIODE |
| SICH5000 | 0.5 A, SILICON, SIGNAL DIODE |
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