参数资料
型号: SIHVM7.5
厂商: SENSITRON SEMICONDUCTOR
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.5 A, SILICON, SIGNAL DIODE
文件页数: 12/14页
文件大小: 98K
代理商: SIHVM7.5
221 West Industry Court 3 Deer Park, NY 11729-4681 3 (631) 586-7600 FAX (631) 249798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
tSENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 963, REV. -
HIGH VOLTAGE, HIGH DENSITY,
STANDARD RECOVERY, LEADED
INDUCTRIAL GRADE SILICON RECTIFIER ASSEMBLY
FEATURES:
Low forward voltage drop
V
R = 2500V – 15000V
Low reverse leakage current
I
F = 2.0A
High thermal shock resistance
I
R = 1.0A
Corona free construction
I
FSM = 80A
Low distributed capacitance
Absolute Maximum Ratings
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
(PIV)
MAX. AVG.
DC
OUTPUT
CURRENT
IF(AV)
Amps
FORCED
AIR @ 600
CFM, 55
°C
IN STILL
OIL @
55
°C
1 CYCLE
SURGE
CURRENT
IFSM
tp = 8.3ms
@ TJ MAX
I
2t
tp = 8.3ms
@ TJ MAX
REPETITIVE
SURGE
CURRENT
IFRM @ 25
°C
PACKAGE
LENGTH
Volts
55
°C
100
°C
Amps
A
2S
Amps
Inches
SICHS2500
SICHS5000
SICHS7500
SICHS10000
SICHS12500
SICHS15000
2500
5000
7500
10000
12500
15000
2.0
1.2
2.0
4.0
80
26
31
1.53
2.53
3.53
4.53
5.53
6.53
Electrical Characteristics
TYPE
NUMBER
MAXIMUM
REVERSE
CURRENT
@ PIV
IR
Amps
MAXIMUM
PEAK
FORWARD
VOLTAGE
VF @ IF
MAXIMUM
REVERSE
RECOVERY
TIME
trr @ 25
°C
25
°C
100
°C
V
A
sec
SICHS2500
SICHS5000
SICHS7500
SICHS10000
SICHS12500
SICHS15000
1.0
10
3.45
5.75
9.20
11.50
14.95
18.40
3.0
2.5
Notes:
- Operating temperature range –40 to +125°C.
- Storage temperature range –40 to +125°C.
Measured on discrete devices prior to assembly.
SICHS2500
SICHS10000
SICHS5000
SICHS12500
SICHS7500
SICHS15000
相关PDF资料
PDF描述
SICH20000 0.5 A, SILICON, SIGNAL DIODE
SIHVM12.5 0.5 A, SILICON, SIGNAL DIODE
SICH12500 0.5 A, SILICON, SIGNAL DIODE
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SICH5000 0.5 A, SILICON, SIGNAL DIODE
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