参数资料
型号: SST25VF064C-80-4C-Q2AE-T
厂商: Microchip Technology
文件页数: 12/37页
文件大小: 0K
描述: IC FLASH SER 64M DUAL I/O 8WSON
标准包装: 2,000
系列: SST25
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 64M(8M x 8)
速度: 80MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-WSON
包装: 带卷 (TR)
64 Mbit SPI Serial Dual I/O Flash
A Microchip Technology Company
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SST25VF064C
Data Sheet
Address bits above the most significant bit can be either V IL or V IH .
One bus cycle is four clock periods (dual operation)
4KByte Sector Erase addresses: use A MS -A 12, remaining addresses are don’t care but must be set either at V IL or V IH.
32KByte Block Erase addresses: use A MS -A 15, remaining addresses are don’t care but must be set either at V IL or V IH.
64KByte Block Erase addresses: use A MS -A 16, remaining addresses are don’t care but must be set either at V IL or V IH.
The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
Manufacturer’s ID is read with A 0 = 0, and Device ID is read with A 0 = 1. All other address bits are 00H. The Manufac-
turer’s ID and device ID output stream is continuous until terminated by a low-to-high transition on CE#.
9. Requires a prior WREN command.
Read (33 MHz)
The Read instruction, 03H, supports up to 33 MHz Read. The device outputs the data starting from the
specified address location. The data output stream is continuous through all addresses until termi-
nated by a low to high transition on CE#. The internal address pointer will automatically increment until
the highest memory address is reached. Once the highest memory address is reached, the address
pointer will automatically increment to the beginning (wrap-around) of the address space. For example,
once the data from address location 7FFFFFH has been read, the next output will be from address
location 000000H.
The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits A 23 -A 0 .
CE# must remain active low for the duration of the Read cycle. See Figure 6 for the Read sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
48
55 56
63 64
70
SCK
MODE 0
SI
03
ADD.
ADD.
ADD.
SO
MSB
MSB
HIGH IMPEDANCE
N
D OUT
N+1
D OUT
N+2
D OUT
N+3
D OUT
N+4
D OUT
MSB
1392 F06.0
Figure 6: Read Sequence
?2011 Silicon Storage Technology, Inc.
12
DS25036A
06/11
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