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参数资料
| 型号： | SST29LE512-150-4I-EHE |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | PROM |
| 英文描述： | 64K X 8 FLASH 3V PROM, 150 ns, PDSO32 |
| 封装： | 8 X 20 MM, MO-142BD, TSOP1-32 |
| 文件页数： | 26/28页 |
| 文件大小： | 348K |
| 代理商： | SST29LE512-150-4I-EHE |
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Data Sheet
512 Kbit Page-Write EEPROM
SST29EE512 / SST29LE512 / SST29VE512
7
2003 Silicon Storage Technology, Inc.
S71060-08-000
11/03 301
Note: This product supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code
sequence. For new designs, SST recommends that the three-byte command code sequence be used.
TABLE
4: SOFTWARE COMMAND SEQUENCE
Command
Sequence
1st Bus
Write Cycle
2nd Bus
Write Cycle
3rd Bus
Write Cycle
4th Bus
Write Cycle
5th Bus
Write Cycle
6th Bus
Write Cycle
Addr1
Data
Addr1
Data
Addr1
Data
Addr1
Data
Addr1
Data
Addr1
Data
Software
Data Protect Enable
& Page-Write
5555H
AAH
2AAAH
55H
5555H
A0H
Addr2
Data
Software Chip-Erase3 5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Software ID Entry4,5
5555H
AAH
2AAAH
55H
5555H
90H
Software ID Exit
5555H
AAH
2AAAH
55H
5555H
F0H
Alternate
Software ID Entry6
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
60H
T4.3 301
1. Address format A14-A0 (Hex), Address A15 can be VIL or VIH, but no other value.”
2. Page-Write consists of loading up to 128 Bytes (A6-A0)
3. The software Chip-Erase function is not supported by the industrial temperature part.
Please contact SST if you require this function for an industrial temperature part.
4. The device does not remain in Software Product ID mode if powered down.
5. With A14-A1 = 0;
SST Manufacturer’s ID = BFH, is read with A0 = 0,
SST29EE512 Device ID = 5DH, is read with A0 = 1
SST29LE/VE512 Device ID = 3DH, is read with A0 = 1
6. Alternate six-byte Software Product ID Command Code
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST29LE512-150-4I-NH | 功能描述:闪存 64K X 8 150ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST29LE512-150-4I-NHE | 功能描述:闪存 64K X 8 150ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST29LE512-150-4I-PH | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit (64K x8) Page-Mode EEPROM |
| SST29LE512-150-4I-UH | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit (64K x8) Page-Mode EEPROM |
| SST29LE512-150-4I-WH | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit (64K x8) Page-Mode EEPROM |
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