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参数资料
| 型号： | SST39LF040-55-4C-NHE |
| 厂商： | Microchip Technology |
| 文件页数： | 2/31页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 4MBIT 55NS 32PLCC |
| 特色产品： | SST Serial and Parallel Flash Memory |
| 标准包装： | 30 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 4M (512K x 8) |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 32-LCC（J 形引线） |
| 供应商设备封装： | 32-PLCC |
| 包装： | 管件 |
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
A Microchip Technology Company
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Product Description
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020, SST39VF040 are
128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprie-
tary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability compared with alternate approaches. The
SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power supply. The
SST39VF010/020/040 devices write with a 2.7-3.6V power supply. The devices conform to JEDEC
standard pinouts for x8 memories.
Featuring high performance Byte-Program, the SST39LF010/020/040 and SST39VF010/020/040
devices provide a maximum Byte-Program time of 20 μsec. These devices use Toggle Bit or Data#
Polling to indicate the completion of Program operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a
wide spectrum of applications, they are offered with a guaranteed typical endurance of 100,000 cycles.
Data retention is rated at greater than 100 years.
The SST39LF010/020/040 and SST39VF010/020/040 devices are suited for applications that require
convenient and economical updating of program, configuration, or data memory. For all system appli-
cations, they significantly improves performance and reliability, while lowering power consumption.
They inherently use less energy during Erase and Program than alternative flash technologies. The
total energy consumed is a function of the applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses less current to program and has a shorter
erase time, the total energy consumed during any Erase or Program operation is less than alternative
flash technologies. These devices also improve flexibility while lowering the cost for program, data, and
configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39LF010/020/040 and SST39VF010/020/040 devices
are offered in 32-lead PLCC and 32-lead TSOP packages. The SST39LF/VF010 and SST39LF/VF020
are also offered in a 48-ball TFBGA package. See Figures 2, 3, 4, and 5 for pin assignments.
?2011 Silicon Storage Technology, Inc.
2
DS25023A
08/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39LF040-55-4C-NHE-T | 功能描述:闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39LF040-55-4C-NK | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF040-55-4C-NKE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF040-55-4C-NME | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF040-55-4C-WH | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
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