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参数资料
| 型号： | SST39LF040-55-4C-NHE |
| 厂商： | Microchip Technology |
| 文件页数： | 8/31页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 4MBIT 55NS 32PLCC |
| 特色产品： | SST Serial and Parallel Flash Memory |
| 标准包装： | 30 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 4M (512K x 8) |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 32-LCC（J 形引线） |
| 供应商设备封装： | 32-PLCC |
| 包装： | 管件 |
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
A Microchip Technology Company
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
internal Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the com-
mand sequence, Figure 12 for timing diagram, and Figure 20 for the flowchart. Any commands written
during the Chip-Erase operation will be ignored.
Write Operation Status Detection
The SST39LF010/020/040 and SST39VF010/020/040 devices provide two software means to detect
the completion of a Write (Program or Erase) cycle, in order to optimize the system write cycle time.
The software detection includes two status bits: Data# Polling (DQ 7 ) and Toggle Bit (DQ 6 ). The End-of-
Write detection mode is enabled after the rising edge of WE# which initiates the internal Program or
Erase operation.
The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a
Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this
occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with
either DQ 7 or DQ 6 . In order to prevent spurious rejection, if an erroneous result occurs, the software
routine should include a loop to read the accessed location an additional two (2) times. If both reads
are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
?2011 Silicon Storage Technology, Inc.
8
DS25023A
08/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39LF040-55-4C-NHE-T | 功能描述:闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39LF040-55-4C-NK | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF040-55-4C-NKE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF040-55-4C-NME | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF040-55-4C-WH | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
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