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参数资料
| 型号： | SSTUB32864EC/G |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 锁存器 |
| 英文描述： | 32864 SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, COMPLEMENTARY OUTPUT, PBGA96 |
| 封装： | 13.50 X 5.50 MM, 1.05 MM HEIGHT, LEAD FREE, PLASTIC, SOT-536-1, LFBGA-96 |
| 文件页数： | 8/19页 |
| 文件大小： | 113K |
| 代理商： | SSTUB32864EC/G |
SSTUB32864_2
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 26 March 2007
16 of 19
NXP Semiconductors
SSTUB32864
1.8 V congurable registered buffer for DDR2-800 RDIMM applications
13.4 Reow soldering
Key characteristics in reow soldering are:
Lead-free versus SnPb soldering; note that a lead-free reow process usually leads to
higher minimum peak temperatures (see Figure 17) than a PbSn process, thus
reducing the process window
Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
Reow temperature prole; this prole includes preheat, reow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classied in accordance with
Table 10 and 11
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reow
soldering, see Figure 17.
Table 10.
SnPb eutectic process (from J-STD-020C)
Package thickness (mm)
Package reow temperature (
°C)
Volume (mm3)
< 350
≥ 350
< 2.5
235
220
≥ 2.5
220
Table 11.
Lead-free process (from J-STD-020C)
Package thickness (mm)
Package reow temperature (
°C)
Volume (mm3)
< 350
350 to 2000
> 2000
< 1.6
260
1.6 to 2.5
260
250
245
> 2.5
250
245
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SSTUB32865 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1.8 V 28-bit 1 : 2 registered buffer with parity for DDR2-800 RDIMM applications |
| SSTUB32865ET/G,518 | 功能描述:寄存器 1.8V 28B REG RoHS:否 制造商:NXP Semiconductors 逻辑类型:CMOS 逻辑系列:HC 电路数量:1 最大时钟频率:36 MHz 传播延迟时间: 高电平输出电流:- 7.8 mA 低电平输出电流:7.8 mA 电源电压-最大:6 V 最大工作温度:+ 125 C 封装 / 箱体:SOT-38 封装:Tube |
| SSTUB32865ET/G-T | 功能描述:寄存器 1.8V 28B REG BUF/PRTY DDR2-800 RoHS:否 制造商:NXP Semiconductors 逻辑类型:CMOS 逻辑系列:HC 电路数量:1 最大时钟频率:36 MHz 传播延迟时间: 高电平输出电流:- 7.8 mA 低电平输出电流:7.8 mA 电源电压-最大:6 V 最大工作温度:+ 125 C 封装 / 箱体:SOT-38 封装:Tube |
| SSTUB32866 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM applications |
| SSTUB32866_10 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:1.8 V 25-bit 1 : 1 or 14-bit 1 : 2 configurable registered buffer with parity for DDR2-800 RDIMM applications |
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