参数资料
型号: SSTUB32872AHMLF
厂商: IDT, Integrated Device Technology Inc
文件页数: 8/18页
文件大小: 0K
描述: IC REGIST BUFF 28BIT DDR2 96-BGA
标准包装: 270
逻辑类型: DDR2 的寄存缓冲器
电源电压: 1.7 V ~ 1.9 V
位数: 28
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 96-LFBGA
供应商设备封装: 96-CABGA(13.5x5.5)
包装: 托盘
16
1222F—3/13/07
ICSSSTUB32872A
Advance Information
3 Test circuits and switching waveforms (cont’d)
3.4 Partial-parity-out load circuit and voltage measurement information (VDD =1.8 V± 0.1V)
All input pulses are supplied by generators having the following characteristics: PRR
10 MHz;
Zo = 50 ; input slew rate = 1 V/ns ± 20%, unless otherwise specified.
(1) CL includes probe and jig capacitance.
Figure 32 — Partial-parity-out load circuit,
VTT = VDD/2
tPLH and tPHL are the same as tPD.
VI(PP) = 600 mV
Figure 33 — Partial-parity-out voltage waveforms; propagation delay times with respect to clock inputs
VTT = VDD/2
tPLH and tPHL are the same as tPD.
VIH = VREF + 250 mV (AC voltage levels) for differential inputs. VIH = VDD for LVCMOS inputs.
VIL = VREF - 250 mV (AC voltage levels) for differential inputs. VIL = VDD for LVCMOS inputs.
Figure 34 — Partial-parity-out voltage waveforms; propagation delay times with respect to reset input
VOH
VOL
OUTPUT
tPLH
002aaa375
VTT
VICR
tPHL
CK
Vi(p-p)
tPHL
002aaa376
LVCMOS RST
INPUT
OUTPUT
VTT
VDD/2
VIH
VIL
VOH
VOL
DUT
Out
Test Point
RL =
CL = 5 pF
(see Note A)
1 k
Ω
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