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参数资料
型号： ST72F324K2B1
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDIP32
封装： 0.400 INCH, SHRINK, PLASTIC, DIP-32
文件页数： 50/156页
文件大小： 1012K
代理商： ST72F324K2B1
ST72324J/K
143/156
10-BIT ADC CHARACTERISTICS (Cont’d)
12.12.2 ADC Accuracy
Notes:
1. ADC Accuracy vs. Negative Injection Current:
For IINJ-=0.8mA, the typical leakage induced inside the die is 1.6A and the effect on the ADC accuracy is a loss of 4 LSB
for each 10K
increase of the external analog source impedance. This effect on the ADC accuracy has been observed
under worst-case conditions for injection:
- negative injection
- injection to an Input with analog capability, adjacent to the enabled Analog Input
-at 5V VDD supply, and worst case temperature.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 12.8 does not affect the ADC
accuracy.
2. Data based on characterization results over the whole temperature range, monitored in production.
3. Data based on characterization results in over the whole temperature range with optimized PCB layout, and MCU in
WFI with timer loop.
Figure 89. ADC Accuracy Characteristics
Symbol
Parameter
Conditions
Typ
Max
Unit
|ET|
Total unadjusted error 1)
3.5
EO
Offset error 1)
3
3.52)
LSB
EG
Gain Error 1)
0.5
22)
|ED|
Differential linearity error 1)
CPU in run mode @ fADC 4MHz.
1.5
4.52)
CPU in test mode @ fADC 4MHz.
1
1.93)
|EL|
Integral linearity error 1)
CPU in run mode @ fADC 4MHz.
1.5
4.52)
CPU in test mode @ fADC 4MHz.
1.3
3.03)
EO
EG
1 LSBIDEAL
1LSB
IDEAL
V
AR EF
V
SSA
–
1024
--------------------------------------------
=
Vin (LSBIDEAL)
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
ET=Total Unadjusted Error: maximum deviation
between the actual and the ideal transfer curves.
EO=Offset Error: deviation between the first actual
transition and the first ideal one.
EG=Gain Error: deviation between the last ideal
transition and the last actual one.
ED=Differential Linearity Error: maximum deviation
between actual steps and the ideal one.
EL=Integral Linearity Error: maximum deviation
between any actual transition and the end point
correlation line.
Digi tal Result ADCDR
1023
1022
1021
5
4
3
2
1
0
7
6
12
3
456
7
1021 1022 1023 1024
(1)
(2)
ET
ED
EL
(3)
VAREF
VSSA
相关PDF资料
PDF描述
ST72F324K6B1 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PDIP32
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相关代理商/技术参数
参数描述
ST72F324K2B6 功能描述:8位微控制器 -MCU 5V RANGE 8B MCU RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ST72F324K2T3 制造商:STMicroelectronics 功能描述:
ST72F324K2T3TR 制造商:STMicroelectronics 功能描述:
ST72F324K2T6 功能描述:8位微控制器 -MCU Flash 8K SPI/SCI RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
ST72F324K2T6TR 功能描述:8位微控制器 -MCU 8 BITS MICROCONTR RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
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