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参数资料
型号： STM32F205RET6TR
厂商： STMICROELECTRONICS
元件分类： 微控制器/微处理器
英文描述： 32-BIT, FLASH, 120 MHz, RISC MICROCONTROLLER, PQFP64
封装： 10 X 10 MM, ROHS COMPLIANT, LQFP-64
文件页数： 133/163页
文件大小： 2275K
代理商： STM32F205RET6TR
STM32F205xx, STM32F207xx
Electrical characteristics
Doc ID 15818 Rev 7
71/163
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Table 21. The MCU is placed
under the following conditions:
●
At startup, all I/O pins are configured as analog inputs by firmware.
●
All peripherals are disabled unless otherwise mentioned
●
The given value is calculated by measuring the current consumption
–
with all peripherals clocked off
–
with one peripheral clocked on (with only the clock applied)
●
The code is running from Flash memory and the Flash memory access time is equal to
3 wait states at 120 MHz
●
Prefetch and Cache ON
●
When the peripherals are enabled, HCLK = 120MHz, fPCLK1 = fHCLK/4, and
fPCLK2 =fHCLK/2
●
The typical values are obtained for VDD = 3.3 V and TA= 25 °C, unless otherwise
specified.
Table 19.
Typical and maximum current consumptions in Standby mode
Symbol
Parameter
Conditions
Typ
Max
Unit
TA = 25 °C
TA = 85 °C TA = 105 °C
VDD =
1.8 V
VDD=
2.4 V
VDD =
3.3 V
VDD = 3.6 V
IDD_STBY
Supply current
in Standby
mode
Backup SRAM ON, RTC ON
4.8
5.2
5.8
15.1(1)
25.8(1)
A
Backup SRAM OFF, RTC ON
4.2
4.5
5.1
12.4(1)
20.5(1)
Backup SRAM ON, RTC OFF
2.3
2.5
3.2
12.5(1)
24.8(1)
Backup SRAM OFF, RTC OFF
1.6
1.8
2.5
9.8(1)
19.2(1)
1.
Based on characterization, not tested in production.
Table 20.
Typical and maximum current consumptions in VBAT mode
Symbol
Parameter
Conditions
Typ
Max
Unit
TA = 25 °C
TA = 85 °C
TA =
105 °C
VDD =
1.8 V
VDD=
2.4 V
VDD =
3.3 V
VDD = 3.6 V
IDD_VBAT
Backup
domain supply
current
Backup SRAM ON, RTC ON
3.2
3.4
3.7
12(1)
19(1)
A
Backup SRAM OFF, low-speed
oscillator and RTC ON
2.6
2.7
3.0
8(1)
10(1)
Backup SRAM ON, RTC OFF
0.7
0.8
9(1)
16(1)
Backup SRAM OFF, RTC OFF
0.1
5(1)
7(1)
1.
Based on characterization, not tested in production.
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