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参数资料
| 型号： | SUD50N03-06P-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 30V TO252 |
| 标准包装： | 2,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 84A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.5 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 3100pF @ 25V |
| 功率 - 最大： | 88W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 带卷 (TR) |
SUD50N03-06P
Vishay Siliconix
SPECIFICATIONS (T J = 2 5 _ C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = 250 m A
V DS = V GS , I D = 250 m A
30
1.0
3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
I GSS
I DSS
I D(on)
r DS(on)
g fs
V DS = 0 V, V GS = " 20 V
V DS = 30 V, V GS = 0 V
V DS = 30 V, V GS = 0 V, T J = 125 _ C
V DS = 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
V GS = 10 V, I D = 20 A, T J = 125 _ C
V GS = 4.5 V, I D = 20 A
V DS = 15 V, I D = 20 A
50
20
0.0053
0.0078
" 100
1
50
0.0065
0.0105
0.0095
nA
m A
A
W
S
Dynamic a
Input Capacitance
C iss
3100
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, V DS = 25 V, f = 1 MHz
565
255
pF
Gate Resistance
Total Gate Charge c
Gate-Source Charge c
R g
Q g
Q gs
V DS = 15 V, V GS = 4.5 V, I D = 50 A
1
1.9
21
10
3.1
30
W
nC
Gate-Drain Charge c
Q gd
7.5
Turn-On Delay Time c
t d(on)
12
20
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 15 V, R L = 0.3 W
I D ^ 50 A, V GEN = 10 V, R g = 2.5 W
12
30
10
20
45
15
ns
Source-Drain Diode Ratings and Characteristic (T C = 25 _ C)
Pulsed Current
I SM
100
A
Diode Forward Voltage b
Source-Drain Reverse Recovery Time
V SD
t rr
I F = 100 A, V GS = 0 V
I F = 50 A, di/dt = 100 A/ m s
1.2
35
1.5
70
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 m s, duty cycle v 2 %.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25 _ C UNLESS NOTED)
200
Output Characteristics
V GS = 10 thru 6 V
100
Transfer Characteristics
160
120
80
5V
4V
80
60
40
T C = 125 _ C
40
20
25 _ C
0
3V
0
–55 _ C
0
2
4
6
8
10
0
1
2
3
4
5
www.vishay.com
2
V DS – Drain-to-Source Voltage (V)
V GS – Gate-to-Source Voltage (V)
Document Number: 71844
S-52636—Rev. D, 02-Jan-06
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| SUD50N03-09P-GE3 | MOSFET N-CH D-S 30V TO252 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SUD50N03-06P-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) 175 DEG.C MOSFET |
| SUD50N03-07 | 功能描述:MOSFET 30V 20A 83W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUD50N03-07AP | 功能描述:MOSFET 30V 25A 88W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUD50N03-07AP | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
| SUD50N03-07AP-E3 | 功能描述:MOSFET 30V 25A 88W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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