参数资料
型号: SUD50N06-08H-E3
厂商: Vishay Siliconix
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH D-S 60V TO252
标准包装: 2,000
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 93A
开态Rds(最大)@ Id, Vgs @ 25° C: 7.8 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 145nC @ 10V
输入电容 (Ciss) @ Vds: 7000pF @ 25V
功率 - 最大: 3W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252,(D-Pak)
包装: 带卷 (TR)

New Product
SUD50N06-08H
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V) r DS(on) ( Ω )
60 0.0078 at V GS = 10 V
I D (A) c
93
Q g (Typ)
94
FEATURES
? TrenchFET ? Power MOSFET
? 175 °C Junction Temperature
? 100 % R g Tested
RoHS
COMPLIANT
?
High Threshold at High Temperature
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
Ordering Information: SUD50N06-08H0-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
60
± 20
Unit
V
Continuous Drain Current (T J = 175 °C) b
T C = 25 °C
T C = 125 °C
I D
93 c
54 c
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current, Single Pulse
I DM
I S
I AS
100
91 c
50
A
136
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T A = 25 °C
E AS
P D
T J , T stg
125
b
3 a
- 55 to 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient a
Junction-to-Case
t ≤ 10 sec
Steady State
R thJA
R thJC
15
40
0.85
18
50
1.1
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
b. See SOA curve for voltage derating.
c. Calculate continuous current based on maximum allowable junction temperature when using infinite heat sink. Package limitation current is 50 A.
Document Number: 73160
S-71661-Rev. B, 06-Aug-07
www.vishay.com
1
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