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参数资料
| 型号： | SUD50N06-08H-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 60V TO252 |
| 标准包装： | 2,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 93A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 145nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7000pF @ 25V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 带卷 (TR) |
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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相关PDF资料 |
PDF描述 |
|---|---|
| SUD50N06-09L-E3 | MOSFET N-CH D-S 60V TO252 |
| SUD50N10-18P-GE3 | MOSFET N-CH 100V DPAK |
| SUD50N10-34P-T4-E3 | MOSFET N-CH D-S 100V TO252 |
| SUD50NP04-77P-T4E3 | MOSFET N/P-CH 40V TO252-4 |
| SUD50P04-13L-E3 | MOSFET P-CH D-S 40V TO252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SUD50N06-09L | 功能描述:MOSFET 60V 50A 136W Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUD50N06-09L_11 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) 175Celsius MOSFET, Logic Level |
| SUD50N06-09L-3E | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 50A 3PIN TO-252 - Rail/Tube |
| SUD50N06-09L-E3 | 功能描述:MOSFET 60V 50A 136W 9.3mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUD50N06-09L-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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