参数资料
型号: SUD50N06-09L-E3
厂商: Vishay Siliconix
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH D-S 60V TO252
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.3 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 70nC @ 10V
输入电容 (Ciss) @ Vds: 2650pF @ 25V
功率 - 最大: 136W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: TO-252,(D-Pak)
包装: 标准包装
其它名称: SUD50N06-09L-E3DKR
SUD50N06-09L
Vishay Siliconix
N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
I D (A) a
FEATURES
? 175 °C Junction Temperature
? TrenchFET ? Power MOSFET
60
0.0093 at V GS = 10 V
0.0122 at V GS = 4.5 V
50
50
? Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
TO-252
Drain Connected to Tab
G
D
G
D
S
Top View
Ordering Information:
SUD50N06-09L-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Gate-Source Voltage
Symbol
V GS
Limit
± 20
Unit
V
Continuous Drain Current (T J = 175 °C) b
T C = 25 °C
T C = 100 °C
I D
50
50 a
Pulsed Drain Current
I DM
100
A
Continuous Source Current (Diode Conduction)
I S
50
a
Avalanche Current
I AS
50
Single Avalanche Energy (Duty Cycle ? 1 %)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T A = 25 °C
E AS
P D
T J , T stg
125
136
3 b , 8.3 b, c
- 55 to 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t ? 10 sec
Steady State
R thJA
R thJC
15
40
0.85
18
50
1.1
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t ? 10 s.
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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