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参数资料
| 型号： | SUD50N06-09L-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH D-S 60V TO252 |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.3 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2650pF @ 25V |
| 功率 - 最大： | 136W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 标准包装 |
| 其它名称： | SUD50N06-09L-E3DKR |
SUD50N06-09L
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ. a
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
60
1
2
3
± 100
V
nA
V DS = 60 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 60 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 60 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current b
I D(on)
V DS = ? 5 V, V GS = 10 V
V GS = 10 V, I D = 20 A
50
0.0074
0.0093
A
Drain-Source On-State Resistance b
R DS(on)
V GS = 10 V, I D = 20 A, T J = 125 °C
V GS = 10 V, I D = 20 A, T J = 175 °C
0.0160
0.0200
?
V GS = 4.5 V, I D = 15 A
0.0122
Forward Transconductance
b
g fs
V DS = 15 V, I D = 20 A
60
S
Dynamic
Input Capacitance
C iss
2650
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
C oss
C rss
Q g
V GS = 0 V, V DS = 25 V, f = 1 MHz
470
225
47
70
pF
Gate-Source
Charge c
Q gs
V DS = 30 V, V GS = 10 V, I D = 50 A
10
nC
Gate-Drain Charge c
Q gd
12
Turn-On Delay Time c
t d(on)
10
20
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 30 V, R L = 0.6 ?
I D ? 50 A, V GEN = 10 V, R g = 2.5 ?
15
35
20
25
50
30
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 °C)
Pulsed Current
I SM
100
A
Diode Forward Voltage
Reverse Recovery Time
V SD
t rr
I F = 20 A, V GS = 0 V
I F = 20 A, di/dt = 100 A/μs
1
45
1.5
100
V
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72004
S13-0298-Rev. F, 11-Feb-13
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SUD50N06-09L-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD50N06-12 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 63A 3-Pin(2+Tab) DPAK |
| SUD50N06-12-E3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 63A 3-Pin(2+Tab) DPAK |
| SUD50N06-16 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK |
| SUD50N06-16-E3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK |
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