- 您现在的位置：买卖IC网 > Datasheet目录526 > SUD50P04-13L-E3 (Vishay Siliconix)MOSFET P-CH D-S 40V TO252 Datasheet资料下载
参数资料
| 型号： | SUD50P04-13L-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH D-S 40V TO252 |
| 标准包装： | 2,000 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 95nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3120pF @ 25V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252，（D-Pak） |
| 包装： | 带卷 (TR) |
New Product
SUD50P04-13L
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = - 250 μA
V DS = V GS , I D = - 250 μA
- 40
- 1.0
- 3.0
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
I GSS
I DSS
I D(on)
r DS(on)
g fs
V DS = 0 V, V GS = ± 20 V
V DS = - 40 V, V GS = 0 V
V DS = - 40 V, V GS = 0 V, T J = 125 °C
V DS = - 5 V, V GS = - 10 V
V GS = - 10 V, I D = - 30 A
V GS = - 10 V, I D = - 30 A, T J = 125 °C
V GS = - 4.5 V, I D = - 20 A
V DS = - 15 V, I D = - 30 A
- 50
15
0.0105
0.017
± 100
-1
- 50
0.013
0.020
0.022
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
C iss
3120
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C oss
C rss
R g
V DS = - 25 V, V GS = 0 V, f = 1 MHz
f = 1 MHz
440
320
4.3
pF
Ω
Total Gate Charge
c
Q g
63
95
Gate-Drain Charge
Gate-Source Charge c
c
Turn-On Delay Time c
Q gs
Q gd
t d(on)
V DS = - 20 V, V GS = - 10 V, I D = - 50 A
13
16
15
25
nC
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = - 20 V, R L = 0.4 Ω
I D ? - 50 A, V GEN = - 10 V, R g = 2.5 Ω
18
60
47
30
90
70
ns
Drain-Source Body Diode Characteristics
Pulse Current
I SM
- 100
Forward Voltage
a
V SD
I F = - 50 A, V GS = 0 V
- 1.0
- 1.5
V
Source-Drain Reverse Recovery Time
t rr
I F = - 50 A, di/dT = 100 A/μs
36
55
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
相关PDF资料 |
PDF描述 |
|---|---|
| SUD50P04-23-E3 | MOSFET P-CH D-S 40V TO252 |
| SUD50P04-40P-T4-E3 | MOSFET P-CH D-S 40V TO252 |
| SUD50P06-15L-T4-E3 | MOSFET P-CH D-S 60V TO252 |
| SUD50P08-26-E3 | MOSFET P-CH D-S 80V TO252 |
| SUD50P10-43-E3 | MOSFET P-CH D-S 100V TO252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SUD50P04-13L-GE3 | 功能描述:MOSFET 40V 60A 93.7W 13mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUD50P04-15 | 功能描述:MOSFET 40V 50A 100W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SUD50P04-15 | 制造商:Vishay Siliconix 功能描述:MOSFET P D-PAK |
| SUD50P04-15_05 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 40-V (D-S), 175C MOSFET |
| SUD50P04-15-E3 | 功能描述:MOSFET 40V 50A 100W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。