- 您现在的位置：买卖IC网 > Datasheet目录527 > SUM110N06-3M9H-E3 (Vishay Siliconix)MOSFET N-CH 60V 110A D2PAK Datasheet资料下载
参数资料
| 型号： | SUM110N06-3M9H-E3 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 110A D2PAK |
| 产品目录绘图： | SUB, SUM Series |
| 标准包装： | 1 |
| 系列： | TrenchFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.9 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 300nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 15800pF @ 25V |
| 功率 - 最大： | 3.75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 标准包装 |
| 产品目录页面： | 1661 (CN2011-ZH PDF) |
| 其它名称： | SUM110N06-3M9H-E3DKR |
SUM110N06-3m9H
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
60
3.4
4.5
100
V
nA
V DS = 60 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 60 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 60 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current a
I D(on)
V DS ≥ 5 V, V GS = 10 V
V GS = 10 V, I D = 30 A
120
0.00325
0.0039
A
Drain-Source On-State Resistance a
r DS(on)
V GS = 10 V, I D = 30 A, T J = 125 °C
0.0063
Ω
V GS = 10 V, I D = 30 A, T J = 175 °C
0.0082
Forward Transconductance a
g fs
V DS = 15 V, I D = 30 A
30
S
Dynamic
b
Input Capacitance
C iss
15 800
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, V DS = 25 V, f = 1 MHz
1050
600
pF
Gate Resistance
R g
f = 1 MHz
0.6
1.2
1.8
Ω
Total Gate Charge c
Q g
200
300
Gate-Drain Charge
Gate-Source Charge c
c
Turn-On Delay Time c
Q gs
Q gd
t d(on)
V DS = 30 V, V GS = 10 V, I D = 110 A
80
45
45
70
nC
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 30 V, R L = 0.27 Ω
I D ? 110 A, V GEN = 10 V, R g = 2.5 Ω
160
75
14
240
115
25
ns
Source-Drain Diode Ratings and Characteristics (T C = 25
°C) b
Continuous Current
Pulsed Current
I S
I SM
110
240
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = 85 A, V GS = 0 V
I F = 85 A, di/dt = 100 A/μs
1.1
65
4.4
143
1.5
100
6.6
330
V
ns
A
nC
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73236
S-70534-Rev. C, 26-Mar-07
相关PDF资料 |
PDF描述 |
|---|---|
| SUM110N10-09-E3 | MOSFET N-CH 100V 110A D2PAK |
| SUM110P04-04L-E3 | MOSFET P-CH D-S 40V D2PAK |
| SUM110P06-08L-E3 | MOSFET P-CH D-S 60V D2PAK |
| SUM110P08-11-E3 | MOSFET P-CH D-S 80V D2PAK |
| SUM33N20-60P-E3 | MOSFET N-CH 200V 33A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SUM110N08-05 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 75-V (D-S) 200∑C MOSFET |
| SUM110N08-05 | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
| SUM110N08-07 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 75-V (D-S) MOSFET |
| SUM110N08-07 | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
| SUM110N08-07-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
发布紧急采购，3分钟左右您将得到回复。