参数资料
型号: SUM90N10-8M2P-E3
厂商: Vishay Siliconix
文件页数: 2/8页
文件大小: 0K
描述: MOSFET N-CH D-S 100V D2PAK
标准包装: 1
系列: TrenchFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 90A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.2 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 4.5V @ 250µA
闸电荷(Qg) @ Vgs: 150nC @ 10V
输入电容 (Ciss) @ Vds: 6290pF @ 50V
功率 - 最大: 3.75W
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263(D2Pak)
包装: 标准包装
其它名称: SUM90N10-8M2P-E3DKR
SUM90N10-8m2P
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V DS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
100
2.5
4.5
± 250
V
nA
V DS = 100 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 100 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 100 V, V GS = 0 V, T J = 150 °C
250
On-State Drain Current a
I D(on)
V DS ?? 10 V, V GS = 10 V
70
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 20 A
V GS = 10 V, I D = 20 A, T J = 125 °C
V DS = 15 V, I D = 20 A
0.0067
0.0127
62
0.0082
0.0170
?
S
Dynamic b
Input Capacitance
C iss
6290
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
C oss
C rss
Q g
V GS = 0 V, V DS = 50 V, f = 1 MHz
535
182
97
150
pF
Gate-Source
Charge c
Q gs
V DS = 50 V, V GS = 10 V, I D = 85 A
32
nC
Gate-Drain Charge c
Q gd
25
Gate Resistance
Turn-On Delay Time
c
R g
t d(on)
f = 1 MHz
0.28
1.4
23
2.8
35
?
Rise Time c
Turn-Off Delay Time
c
t r
t d(off)
V DD = 50 V, R L = 0.588 ?
I D ? 85 A, V GEN = 10 V, R g = 1 ?
17
34
26
52
ns
Fall Time c
t f
9
18
Source-Drain Diode Ratings and Characteristics (T C = 25 °C)
b
Continuous Current
Pulsed Current
I S
I SM
85
240
A
Forward Voltage a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
V SD
t rr
I RM(REC)
Q rr
I F = 30 A, V GS = 0 V
I F = 75 A, di/dt = 100 A/μs
0.85
61
3
91
1.5
100
4.5
130
V
ns
A
μC
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74643
S12-0335-Rev. B, 13-Feb-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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