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参数资料
| 型号： | T431616E-7SG |
| 厂商： | TM Technology, Inc. |
| 英文描述： | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| 中文描述： | 100万× 16内存为512k × 16Bit的X 2Banks同步DRAM |
| 文件页数： | 19/74页 |
| 文件大小： | 781K |
| 代理商： | T431616E-7SG |
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TE
CH
tm
Electrical Characteristics and Recommended A.C. Operating Conditions
(V
DD
= 3.3V
±
0.3V, Ta = -0~70
°
C) (Note: 5, 6, 7, 8)
T431616D/E
TM Technology Inc. reserves the right
P. 19
to change products or specifications without notice.
Publication Date: FEB. 2007
Revision: A
- 5/6/7/7L
Symbol
A.C. Parameter
Min.
Max.
Unit
Note
t
RC
Row cycle time
(same bank)
RAS# to CAS# delay
(same bank)
Precharge to refresh/row activate command
(same bank)
Row activate to row activate delay
(different banks)
Row activate to precharge time
(same bank)
Write recovery time
48/54/63/63
9
t
RCD
15/16/16/16
9
t
RP
15/16/16/16
ns
9
t
RRD
10/12/14/14
9
t
RAS
35/42/42/42
100,000
t
WR
2
Cycle
t
CK1
t
CK2
t
CK3
CL* = 1
-/20/20/20
Clock cycle time
CL* = 2
-/7/8/8
10
CL* = 3
5/6/7/7
t
CH
Clock high time
2/2/2.5/2.5
ns
11
t
CL
Clock low time
2/2/2.5/2.5
11
t
AC1
Access time from CLK
CL* = 1
-/8/13/13
t
AC2
(positive edge)
CL* = 2
-/6/6.5/6.5
11
t
AC3
CL* = 3
4.5/5/5.5/5.5
t
CCD
CAS# to CAS# Delay time
1
Cycle
t
OH
t
LZ
Data output hold time
1.8/2/2/2
10
Data output low impedance
1
t
HZ
Data output high impedance
3/4/5/5
8
t
IS
Data/Address/Control Input set-up time
2
ns
11
t
IH
Data/Address/Control Input hold time
1
11
t
PDE
PowerDown Exit set-up time
2
t
REF
Refresh time
64
ms
* CL is CAS# Latency.
Note:
1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
2. All voltages are referenced to VSS. VIH(Max)=4.6 for pulse width
≤
5ns.VIL(Min)=-1.5Vfor pulse width
≤
5ns.
3. These parameters depend on the cycle rate and these values are measured by the cycle rate under the minimum value of tCK and
tRC. Input signals are changed one time during tCK.
4. These parameters depend on the output loading. Specified values are obtained with the output open.
5.
Power-up sequence is described in Note 12.
6.
A.C. Test Conditions
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|---|---|
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