参数资料
型号: T436416C-7S
厂商: TM Technology, Inc.
英文描述: 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
中文描述: 4米× 16 SDRAM的100万x 16Bit的X 4Banks同步DRAM
文件页数: 23/28页
文件大小: 651K
代理商: T436416C-7S
TE
CH
tm
Read Interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length=Full Page
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T436416C
TM Technology Inc. reserves the right
P.23
to change products or specifications without notice.
Publication Date: AUG. 2004
Revision: A
C L O C K
C K E
C S
R A S
C A S
A D D R
A 1 3 ,A 1 2
A 1 0 /A P
C L = 2
C L = 3
W E
1 0
1 1
1 2
1 3
1 4
1 5
1 6
1 7
1 8
1 9
H IG H
D Q M
D Q
:D o n 't care
R A a
C A a
C A b
R A a
Q A a0
Q A a1
Q A a2
Q A a3
Q A a4
Q A a0
Q A a1
Q A a2
Q A a3
Q A a4
Q A b 0
Q A b 0
Q A b 1
Q A b 1
Q A b 2
Q A b 3
Q A b 2
Q A b 4
Q A b 3
Q A b 5
Q A b 4
Q A b 5
* N o te 2
1
2
2
1
R ow A ctive
(A -B an k )
R ead (A -
B an k )
R ead (A -
B an k )
B u rst S top
P recharge
(A -B an k )
*Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue.
2. About the valid DQs after burst stop, it is same as the case of RAS interrupt.
Both cases are illustrated above timing diagram. See the lable 1,2 on them.
But at burst write, burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of ‘Full Page write burst stop cycle’.
3. Burst stop is valid at every burst length.
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T436416C-7SG 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
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相关代理商/技术参数
参数描述
T436416C-7SG 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5C 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5CG 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
T436416D-5S 制造商:TMT 制造商全称:TMT 功能描述:4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM