参数资料
| 型号： | TISP61089BGDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR PROGRAMMABLE SLIC |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089B
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61089B High Voltage Ringing SLIC Protector
Dual Voltage-Programmable Protectors
- Supports Battery Voltages Down to -155 V
D Package (Top View)
- Low 5 mA max. Gate Triggering Current
- High 150 mA min. Holding Current
(Tip)
K1
1
8
K1 (Tip)
(Gate) G
2
7
A
(Ground)
Rated for LSSGR ‘1089 Conditions
NC
3
6
A
(Ground)
Impulse
‘1089 Test
I TSP
(Ring) K2
4
5
K2 (Ring)
Waveshape
2/10
10/360
10/1000
Section
4.5.7
4.5.8
4.5.7
4.5.7
Test #
4
1
2, 5
1,3
A
120
30
30
MD6XANB
NC - No internal connection
Terminal typical application names shown in
parenthesis
Device Symbol
K1
K1
60 Hz Power
‘1089 Test
I TSM
Fault Times
Section
Test #
A
0.5
1
2
5
4.5.12
4.5.12
4.5.12
4.5.12
4.5.13
9
3, 4, 8
7
5
2, 3
6.5
4.6
3.4
2.3
A
A
G
30
4.5.12
6
1.3
K2
K2
4.5.12
1, 2
Te rminals K1, K2 and A correspond to the alternative
900
4.5.13
4.5.15/16
1, 4, 5
0.73
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the
voltage, V GG, applied to the G terminal. SD6XAEB
2/10 Overshoot Voltage Specified
Rated for ITU-T K.20, K.21 and K.45
Element
Diode
I TM = 100 A, di/dt = 80 A/ μ s
V
10
Waveshape
Voltage Current
I TSP
A
SCR
12
10/700
5/310
40
............................................ UL Recognized Components
How To Order
Device
TISP61089B
Package
D (8-pin Small-Outline)
Carrier
Embossed Tape Reeled
Order As
TISP61089BDR-S
Description
The TISP61089B is a dual forward-conducting buffered p-gate thyristor (SCR) overvoltage protector. It is designed to protect monolithic SLICs
(Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The
TISP61089B limits voltages that exceed the SLIC supply rail voltage. The TISP61089B parameters are specified to allow equipment
compliance with Bellcore GR-1089-CORE, Issue 2 and ITU-T recommendations K.20, K.21 and K.45.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
OCTOBER 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089BSDR-S | 功能描述:SCR PROTECTOR - QUAD PROGRAMMABLE RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
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