参数资料
| 型号： | TISP61089BGDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR PROGRAMMABLE SLIC |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089B High Voltage Ringing SLIC Protector
Gated Protectors (Continued)
0V
I CB
B (G)
V BATH
+ V FRM
K
I GKS
TISP
I EB
61089B
AI6XCE
Figure 10. Transistor CB and EB Verification
Testing transistor CB, SCR AK off state and diode reverse blocking: The highest AK voltage occurs during the overshoot period of the
protector. To make sure that the SCR and diode blocking junctions do not break down during this period, a d.c. test for off-state current, I D ,
can be applied at the overshoot voltage value. To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is
shorted during this test (see Figure 11).
0V
I CB
0V
V (BO)
TISP
61089B
I R
A
I D(I)
K
B (G)
I D
AI6XCF
I D(I) is the internal SCR value of I D
Figure 11. Off-State Current Verification
Summary: Two tests are needed to verify the protector junctions. Maximum current values for I GKS and I D are required at the specified applied
voltage conditions.
OVER-
CURRENT
PROTECTION
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
SLIC
PROTECTOR
SLIC
TIP
WIRE
R1a
Th1
S3a
Th4
Th3
S1a
S2a
RING
R1b
Th2
Th5
WIRE
TISP
S3b
TISP
3xxxF3
OR
7xxxF3
S1b
S2b
61089B
V BATH
C1
220 nF
TEST
EQUIP-
MENT
RING
GENERATOR
AI6XAJB
Figure 12. Typical Application Circuit
OCTOBER 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TISP61089BSDR-S | 功能描述:SCR PROTECTOR - QUAD PROGRAMMABLE RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
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