参数资料
| 型号： | TISP61089BGDR-S |
| 厂商： | Bourns Inc. |
| 文件页数： | 6/20页 |
| 文件大小： | 0K |
| 描述： | PROTECTOR PROGRAMMABLE SLIC |
| 标准包装： | 2,500 |
| 电压 - 击穿： | 64V |
| 电压 - 断路： | 170V |
| 电流 - 峰值脉冲(10 x 1000µs)： | 30A |
| 电流 - 保持 (Ih)： | 150mA |
| 元件数： | 2 |
| 电容： | 100pF |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
TISP61089B High Voltage Ringing SLIC Protector
APPLICATIONS INFORMATION
Operation of Ringing SLICs using Multiple Negative Voltage Supply Rails
Figure 4 shows a typical powering arrangement for a multi-supply rail SLIC. VBATL is a lower (smaller) voltage supply than VBATH. With supply
switch S1 in the position shown, the line driver amplifiers are powered between 0 V and VBATL. This mode minimizes the power consumption
for short loop transmission. For long loops and to generate ringing, the driver voltage is increased by operating S1 to connect VBATH. These
conditions are shown in Figure 5.
SLIC
0V
LINE
LINE
S1
SUPPLY
V BATL
V BATH
DRIVERS
SWITCH
AI6XCC
Figure 4. SLIC with Voltage Supply Switching
0V
0V
V PKRING /2
V SLICG
0V
V BATL
V BATH
V DCRING
V PKRING /2
V PKRING /2
V PKRING /2
V SLICH
V BATH
V BATH
SHORT LOOP
LONG LOOP
RINGING
AI6XCD
Figure 5. Driver Supply Voltage Levels
Conventional ringing is typically unbalanced ground or battery backed. To minimize the supply voltage required, most multi-rail SLICs use
balanced ringing as shown in Figure 5. The ringing has d.c., V DCRING , and a.c., V PKRING , components. A 70 V r.m.s. a.c. sinusoidal ring signal
has a peak value, V PKRING , of 99 V. If the d.c. component was 20 V, then the total voltage swing needed would be 99 + 20 = 119 V. There are
internal losses in the SLIC from ground, V SLICG , and the negative supply, V SLICH . The sum of these two losses generally amounts to a total of
10 V. This makes a total, V BATH , supply rail value of 119 + 10 = 129 V.
In some cases a trapezoidal a.c. ring signal is used. This would have a peak to r.m.s ratio (crest factor) of about 1.25, increasing the r.m.s. a.c.
ring level by 13 %. The d.c. ring voltage may be lowered for short loop applications.
OCTOBER 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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| TISP61089BSDR-S | 功能描述:SCR PROTECTOR - QUAD PROGRAMMABLE RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089D | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DR-S | 功能描述:SCR Dual P Gate Forward Conducting RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| TISP61089DS | 制造商:Bourns Inc 功能描述: |
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