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| 型号： | TMPSNS-RTD1 |
| 厂商： | Microchip Technology |
| 文件页数： | 3/43页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL PT100 RTD TEMP SENSOR |
| 标准包装： | 1 |
| 传感器类型： | 温度 |
| 接口： | USB |
| 嵌入式： | 是，MCU，8 位 |
| 已供物品： | 板，缆线，CD |
| 已用 IC / 零件： | MCP3301，MCP6S26，PIC18F2550 |
| 产品目录页面： | 672 (CN2011-ZH PDF) |
| 相关产品： | MCP3301T-BI/SN-ND - IC ADC 13BIT 2.7V 1CH SPI 8-SOIC MCP3301-BI/SN-ND - IC ADC 13BIT 2.7V SPI 8-SOIC MCP3301T-CI/SN-ND - IC ADC 13BIT 2.7V 1CH SPI 8-SOIC MCP3301T-BI/MS-ND - IC ADC 13BIT 2.7V 1CH SPI 8-MSOP MCP3301T-CI/MS-ND - IC ADC 13BIT 2.7V 1CH SPI 8-MSOP MCP3301-BI/P-ND - IC ADC 13BIT 2.7V SPI 8-DIP MCP3301-BI/MS-ND - IC ADC 13BIT 2.7V SPI 8-MSOP MCP3301-CI/SN-ND - IC ADC 13BIT 2.7V 1CH SPI 8SOIC MCP3301-CI/P-ND - IC ADC 13BIT 2.7V 1CH SPI 8-DIP MCP3301-CI/MS-ND - IC ADC 13BIT 2.7V 1CH SPI 8-MSOP |
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MCP6S21/2/6/8
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, T A = +25°C, V DD = +2.5V to +5.5V, V SS = GND, V REF = V SS , G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 to CH7 = 0.3V, R L = 10 k ? to V DD /2, SI and SCK are tied low and CS is tied high.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Power Supply
Supply Voltage
V DD
2.5
—
5.5
V
Quiescent Current
Quiescent Current, Shutdown
mode
I Q
I Q_SHDN
0.5
—
1.0
0.5
1.35
1.0
mA
μA
Power-On Reset
POR Trip Voltage
POR Trip Voltage Drift
V POR
? V POR / ? T
1.2
—
1.7
-3.0
2.2
—
V
mV/°C
T A = -40°C to+85°C
Note 1: R LAD (R F + R G in Figure 4-1) connects V REF , V OUT and the inverting input of the internal amplifier. The MCP6S22 has
V REF tied internally to V SS , so V SS is coupled to the internal amplifier and the PSRR spec describes PSRR+ only. We
recommend the MCP6S22’s V SS pin be tied directly to ground to avoid noise problems.
2: I Q includes current in R LAD (typically 60 μA at V OUT = 0.3V). Both I Q and I Q_SHDN exclude digital switching currents.
3: The output goes Hi-Z and the registers reset to their defaults; see Section 5.4, “Power-On Reset”.
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T A = +25°C, V DD = +2.5V to +5.5V, V SS = GND, V REF = V SS , G = +1 V/V,
Input = CH0 =(0.3V)/G, CH1 to CH7=0.3V, R L = 10 k ? to V DD /2, C L = 60 pF, SI and SCK are tied low, and CS is tied high.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Frequency Response
-3 dB Bandwidth
Gain Peaking
BW
GPK
—
—
2 to 12
0
—
—
MHz
dB
All gains; V OUT < 100 mV P-P
Total Harmonic Distortion plus Noise
f = 1 kHz, G = +1 V/V
THD+N
—
0.0015
—
%
V OUT = 1.5V ± 1.0V PK , V DD = 5.0V,
BW = 22 kHz
f = 1 kHz, G = +4 V/V
THD+N
—
0.0058
—
%
V OUT = 1.5V ± 1.0V PK , V DD = 5.0V,
BW = 22 kHz
f = 1 kHz, G = +16 V/V
THD+N
—
0.023
—
%
V OUT = 1.5V ± 1.0V PK , V DD = 5.0V,
BW = 22 kHz
f = 20 kHz, G = +1 V/V
THD+N
—
0.0035
—
%
V OUT = 1.5V ± 1.0V PK , V DD = 5.0V,
BW = 80 kHz
f = 20 kHz, G = +4 V/V
THD+N
—
0.0093
—
%
V OUT = 1.5V ± 1.0V PK , V DD = 5.0V,
BW = 80 kHz
f = 20 kHz, G = +16 V/V
THD+N
—
0.036
—
%
V OUT = 1.5V ± 1.0V PK , V DD = 5.0V,
BW = 80 kHz
Step Response
Slew Rate
SR
—
—
—
4.0
11
22
—
—
—
V/μs
V/μs
V/μs
G = 1, 2
G = 4, 5, 8, 10
G = 16, 32
Noise
Input Noise Voltage
E ni
—
3.2
—
μV P-P
—
26
—
Input Noise Voltage Density
Input Noise Current Density
e ni
i ni
—
—
10
4
—
—
fA/ √ Hz f = 10 kHz
Note 1: See Table 4-1 for a list of typical numbers.
2: E ni and e ni include ladder resistance noise. See Figure 2-33 for e ni vs. G data.
? 2003 Microchip Technology Inc.
DS21117A-page 3
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