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参数资料
| 型号： | TMPSNS-RTD1 |
| 厂商： | Microchip Technology |
| 文件页数： | 9/43页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL PT100 RTD TEMP SENSOR |
| 标准包装： | 1 |
| 传感器类型： | 温度 |
| 接口： | USB |
| 嵌入式： | 是，MCU，8 位 |
| 已供物品： | 板，缆线，CD |
| 已用 IC / 零件： | MCP3301，MCP6S26，PIC18F2550 |
| 产品目录页面： | 672 (CN2011-ZH PDF) |
| 相关产品： | MCP3301T-BI/SN-ND - IC ADC 13BIT 2.7V 1CH SPI 8-SOIC MCP3301-BI/SN-ND - IC ADC 13BIT 2.7V SPI 8-SOIC MCP3301T-CI/SN-ND - IC ADC 13BIT 2.7V 1CH SPI 8-SOIC MCP3301T-BI/MS-ND - IC ADC 13BIT 2.7V 1CH SPI 8-MSOP MCP3301T-CI/MS-ND - IC ADC 13BIT 2.7V 1CH SPI 8-MSOP MCP3301-BI/P-ND - IC ADC 13BIT 2.7V SPI 8-DIP MCP3301-BI/MS-ND - IC ADC 13BIT 2.7V SPI 8-MSOP MCP3301-CI/SN-ND - IC ADC 13BIT 2.7V 1CH SPI 8SOIC MCP3301-CI/P-ND - IC ADC 13BIT 2.7V 1CH SPI 8-DIP MCP3301-CI/MS-ND - IC ADC 13BIT 2.7V 1CH SPI 8-MSOP |
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MCP6S21/2/6/8
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, T A = +25°C, V DD = +5.0V, V SS = GND, V REF = V SS , G= +1 V/V,
Input = CH0 = (0.3V)/G, CH1 to CH7 = 0.3V, R L = 10 k ? to V DD /2, and C L = 60 pF.
22%
20%
18%
16%
14%
12%
10%
420 Samples
G = +1
18%
16%
14%
12%
10%
8%
420 Samples
G = +1
T A = -40 to +125°C
8%
6%
4%
2%
0%
DC Gain Error (%)
6%
4%
2%
0%
DC Gain Drift (%/°C)
FIGURE 2-1:
DC Gain Error, G = +1.
FIGURE 2-4:
DC Gain Drift, G = +1.
18%
16%
14%
12%
10%
8%
6%
4%
2%
420 Samples
G +2
24%
22%
20%
18%
16%
14%
12%
10%
8%
6%
4%
2%
0%
420 Samples
G +2
T A = -40 to +125°C
0%
DC Gain Error (%)
DC Gain Drift (%/°C)
FIGURE 2-2:
DC Gain Error, G ≥ +2.
FIGURE 2-5:
DC Gain Drift, G ≥ +2.
22%
20%
18%
16%
14%
12%
10%
420 Samples
T A = -40 to +125°C
20%
18%
16%
14%
12%
10%
360 Samples
V DD = 4.0 V
G = +1
8%
6%
4%
2%
0%
Ladder Resistance Drift (%/°C)
8%
6%
4%
2%
0%
Input Offset Voltage (μV)
FIGURE 2-3:
Ladder Resistance Drift.
FIGURE 2-6:
Input Offset Voltage,
V DD = 4.0V.
? 2003 Microchip Technology Inc.
DS21117A-page 9
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