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| 型号： | TPS23756PWP |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 稳压器 |
| 英文描述： | 1.1 A SWITCHING CONTROLLER, 278 kHz SWITCHING FREQ-MAX, PDSO20 |
| 封装： | GREEN, PLASTIC, HTSSOP-20 |
| 文件页数： | 19/41页 |
| 文件大小： | 1405K |
| 代理商： | TPS23756PWP |
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TPS23754
TPS23754-1
TPS23756
SLVS885D – OCTOBER 2008 – REVISED DECEMBER 2009
www.ti.com
Schottky diode leakage current and lower dynamic resistance can impact the detection signature. Setting
reasonable expectations for the temperature range over which the detection signature is accurate is the simplest
solution. Increasing RDEN slightly may also help meet the requirement.
Schottky diodes have proven less robust to the stresses of ESD transients, failing as a short or becoming leaky.
Care must be taken to provide adequate protection in line with the exposure levels. This protection may be as
simple as ferrite beads and capacitors.
A general recommendation for the input rectifiers are 1 A or 2 A, 100 V rated discrete or bridge diodes.
Protection, D1
A TVS, D1, across the rectified PoE voltage per Figure 29 must be used. An SMAJ58A, or a part with equal to or
better performance, is recommended for general indoor applications. If an adapter is connected from VDD1 to
RTN, as in ORing option 2 above, voltage transients caused by the input cable inductance ringing with the
internal PD capacitance can occur. Adequate capacitive filtering or a TVS must limit this voltage to be within the
absolute maximum ratings. Outdoor transient levels or special applications require additional protection.
Use of diode DVDD for PoE priority may dictate the use of additional protection around the TPS23754. ESD
events between the PD power inputs, or the inputs and converter output, cause large stresses in the hotswap
MOSFET if DVDD becomes reverse biased and transient current around the TPS23754 is blocked. The use of
CVDD and DRTN in Figure 29 provides additional protection should over-stress of the TPS23754 be an issue. An
SMAJ58A would be a good initial selection for DRTN. Individual designs may have to tune the value of CVDD.
Figure 29. Example of Added ESD Protection for PoE Priority
Capacitor, C1
The IEEE 802.3at standard specifies an input bypass capacitor (from VDD to VSS) of 0.05 μF to 0.12 μF. Typically
a 0.1
μF, 100 V, 10% ceramic capacitor is used.
Detection Resistor, RDEN
The IEEE 802.3at standard specifies a detection signature resistance, RDEN between 23.75 k and 26.25 k, or
25 k
± 5%. Choose an RDEN of 24.9 k.
Classification Resistor, RCLS
Connect a resistor from CLS to VSS to program the classification current according to the IEEE 802.3at standard.
The class power assigned should correspond to the maximum average power drawn by the PD during operation.
For a high power design, choose class 4 and RCLS = 63.4 .
26
Copyright 2008–2009, Texas Instruments Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| TPS23756PWPR | 功能描述:热插拔功率分布 Hi Pwr Eff PoE Inter face & DC/DC Cntrlr RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| TPS23757EVM | 功能描述:电源管理IC开发工具 TPS23757 Eval Mod RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| TPS23757PW | 功能描述:热插拔功率分布 Hi Eff PoE Inter & DC/DC Controller RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| TPS23757PWR | 功能描述:热插拔功率分布 Hi Eff PoE Interface & DC/DC Controller RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
| TPS2375D | 功能描述:热插拔功率分布 IEEE 802.3af PoE Pwr Device Cntrler RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube |
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