参数资料
型号: US6J11TR
厂商: Rohm Semiconductor
文件页数: 3/12页
文件大小: 0K
描述: MOSFET 2P-CH 12V 1.3A TUMT6
标准包装: 3,000
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 12V
电流 - 连续漏极(Id) @ 25° C: 1.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 260 毫欧 @ 1.3A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 1mA
闸电荷(Qg) @ Vgs: 2.4nC @ 4.5V
输入电容 (Ciss) @ Vds: 290pF @ 6V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: UMT6
包装: 带卷 (TR)
US6J11
l Electrical characteristics (T a = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Data Sheet
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C iss
C oss
C rss
t d(on) *5
t r *5
t d(off) *5
t f *5
Conditions
V GS = 0V
V DS = - 6V
f = 1MHz
V DD ? - 6V, V GS = - 4.5V
I D = - 0.6A
R L = 10 W
R G = 10 W
Min.
-
-
-
-
-
-
-
Values
Typ.
290
28
21
8
10
30
9
Max.
-
-
-
-
-
-
-
Unit
pF
ns
l Gate Charge characteristics (T a = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Q g
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
*5
Q gs *5
Q gd *5
Conditions
V DD ? - 6V, I D = - 1.3A
V GS = - 4.5V
Min.
-
-
-
Values
Typ.
2.4
0.6
0.4
Max.
-
-
-
Unit
nC
l Body diode electrical characteristics (Source-Drain)(T a = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Inverse diode continuous,
forward current
Forward voltage
Symbol
I S *1
V SD *5
Conditions
T a = 25°C
V GS = 0V, I s = - 1.3A
Min.
-
-
Values
Typ.
-
-
Max.
- 0.5
- 1.2
Unit
A
V
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
3/11
2012.10 - Rev.B
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