参数资料
型号: V58C2128164SBLI6
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 8M X 16 DDR DRAM, 0.7 ns, PDSO66
封装: 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66
文件页数: 32/60页
文件大小: 916K
代理商: V58C2128164SBLI6
38
V58C2128(804/404/164)SB Rev. 2.2 March 2007
ProMOS TECHNOLOGIES
V58C2128(804/404/164)SB
SLEW RATE DERATING VALUES
(Notes: 14; notes appear on pages 50-53) 0°C TA +70°C; VDDQ= +2.5V ±0.2V, VDD = +2.5V ±0.2V for
DDR400 VDDQ= +2.6V ±0.1V, VDD = +2.6V ±0.1V)
SLEW RATE DERATING VALUES
(Note: 31; notes appear on pages 50-53) (0°C TA +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V for
DDR400 VDDQ= +2.6V ±0.1V, VDD = +2.6V ±0.1V)
NOTES:
1. All voltages referenced to VSS.
2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal
reference/supply voltage levels, but the related specifications and device operation are guaranteed for the
full voltage range specified.
3. Outputs measured with equivalent load:
ADDRESS / COMMAND
SLEW RATE
tIS
tIH
UNITS
NOTES
0.500V / ns
0
ps
14
0.400V / ns
+50
ps
14
0.300V / ns
+100
ps
14
0.200V / ns
+150
ps
14
Date, DQS, DM
SLEW RATE
tDS
tDH
UNITS
NOTES
0.500V / ns
0
ps
31
0.400V / ns
+75
ps
31
0.300V / ns
+150
ps
31
0.200V / ns
+225
ps
31
Output
(VOUT)
VTT
50
Reference
Point
30pF
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