参数资料
型号: W19B320SBB9B
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
封装: TFBGA-48
文件页数: 36/52页
文件大小: 1869K
代理商: W19B320SBB9B
W19B(L)320ST/B
Publication Release Date: March 23, 2004
- 41 -
Revision A2
8.4.8 Alternate #CE Controlled Erase and Program Operations
90 nS
PARAMETER
SYM.
MIN.
TYP.
(Note3)
MAX.
(Note4)
UNIT
Write Cycle Time (Note 1)
TWC
90
-
nS
Address Setup Time
TAS
0
-
nS
Address Hold Time
TAH
45
-
nS
Data Setup Time
TDS
45
-
nS
Data Hold Time
TDH
0
-
nS
Read Recover Time Before Write (#OE High to #WE
Low)
TGHEL
0
-
nS
#WE Setup Time
TWS
0
-
nS
#WE Hold Time
TWH
0
-
nS
#CE Pulse Width
TCP
35
-
nS
#CE Pulse Width High
TCPH
30
-
nS
Byte
TPB
-
5
150
Programming Time (Note 6)
Word
TPW
-
7
210
S
Byte
Accelerated Programming Time (Note 6)
Word
TACCP
-
4
120
S
Sector Erase Time (Note 2)
TSE
-
0.7
15
Sec
Chip Erase Time (Note 2)
TCE
-
49
-
Sec
Byte
TCPB
-
21
63
Chip Program Time (Note 5)
Word
TCPW
-
14
42
Sec
Notes:
1. Not 100 % tested.
2. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
3. Typical program and erase time assume the following conditions :25
°C, 3.0 V VDD, 10,000 or 100,000
cycles .Additionally, programming typicals assume checkerboard pattern.
4. Under worst case conditions of 90
°C, VDD = 2.7V for W19B320S or VDD = 3.0V for W19L320S, 10,000 or 100,000
cycles.
5. The typical chip programming time is considerably less than the maximun chip programming time listed,since most
bytes program faster than maximun program times listed.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command.
7. The device has a minimum erase and program cycle endurance of 10,000 or100,000 cycles.
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