参数资料
型号: W25Q16BVZPIG
厂商: Winbond Electronics
文件页数: 13/68页
文件大小: 0K
描述: IC SPI FLASH 16MBIT 8WSON
标准包装: 100
系列: SpiFlash®
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 16M(2M x 8)
速度: 104MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-WSON(6x5)
包装: 管件

W25Q16BV
11.
CONTROL AND STATUS REGISTERS
The Read Status Register-1 and Status Register-2 instructions can be used to provide status on the
availability of the Flash memory array, if the device is write enabled or disabled, the state of write
protection, the Quad SPI setting and Erase Suspend status. The Write Status Register instruction can be
used to configure the devices write protection features and Quad SPI setting. Write access to the Status
Register is controlled by the state of the non-volatile Status Register Protect bits (SRP0, SRP1), the Write
Enable instruction, and in some cases the /WP pin.
11.1 STATUS REGISTER
11.1.1 BUSY
BUSY is a read only bit in the status register (S0) that is set to a 1 state when the device is executing a
Page Program, Sector Erase, Block Erase, Chip Erase or Write Status Register instruction. During this
time the device will ignore further instructions except for the Read Status Register and Erase Suspend
instruction (see t W , t PP , t SE , t BE , and t CE in AC Characteristics). When the program, erase or write status
register instruction has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready
for further instructions.
11.1.2 Write Enable Latch (WEL)
Write Enable Latch (WEL) is a read only bit in the status register (S1) that is set to a 1 after executing a
Write Enable Instruction. The WEL status bit is cleared to a 0 when the device is write disabled. A write
disable state occurs upon power-up or after any of the following instructions: Write Disable, Page
Program, Sector Erase, Block Erase, Chip Erase and Write Status Register.
11.1.3 Block Protect Bits (BP2, BP1, BP0)
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read/write bits in the status register (S4, S3, and
S2) that provide Write Protection control and status. Block Protect bits can be set using the Write Status
Register Instruction (see t W in AC characteristics). All, none or a portion of the memory array can be
protected from Program and Erase instructions (see Status Register Memory Protection table). The
factory default setting for the Block Protection Bits is 0, none of the array protected.
11.1.4 Top/Bottom Block Protect (TB)
The non-volatile Top/Bottom bit (TB) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the
Top (TB=0) or the Bottom (TB=1) of the array as shown in the Status Register Memory Protection table.
The factory default setting is TB=0. The TB bit can be set with the Write Status Register Instruction
depending on the state of the SRP0, SRP1 and WEL bits.
11.1.5 Sector/Block Protect (SEC)
The non-volatile Sector protect bit (SEC) controls if the Block Protect Bits (BP2, BP1, BP0) protect 4KB
Sectors (SEC=1) or 64KB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown
in the Status Register Memory Protection table. The default setting is SEC=0.
Publication Release Date: July 08, 2010
- 13 -
Revision F
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