参数资料
型号: W25Q32DWZPIP
厂商: WINBOND ELECTRONICS CORP
元件分类: PROM
英文描述: 256K X 16 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8
封装: 6 X 5 MM, GREEN, WSON-8
文件页数: 43/82页
文件大小: 1155K
代理商: W25Q32DWZPIP
W25Q32DW
- 48 -
10.2.25 Chip Erase (C7h / 60h)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A Write
Enable instruction must be executed before the device will accept the Chip Erase Instruction (Status
Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and shifting the
instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure 24.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase
instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction will
commence for a time duration of tCE (See AC Characteristics). While the Chip Erase cycle is in progress,
the Read Status Register instruction may still be accessed to check the status of the BUSY bit. The
BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is ready to
accept other instructions again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit
in the Status Register is cleared to 0. The Chip Erase instruction will not be executed if any page is
protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Status Register Memory
Protection table).
/CS
CLK
DI
(IO
0)
DO
(IO
1)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (C7h/60h)
High Impedance
Mode 0
Mode 3
/CS
CLK
Mode 0
Mode 3
0
1
IO
0
IO
1
IO
2
IO
3
C7h/60h
Instruction
Mode 0
Mode 3
Figure 24. Chip Erase Instruction for SPI Mode (left) or QPI Mode (right)
相关PDF资料
PDF描述
W25Q80VZPIG 1M X 8 SPI BUS SERIAL EEPROM, DSO8
W25X16AVDAIZ 2M X 8 FLASH 2.7V PROM, PDIP8
W25X40AVSSIG 512K X 8 FLASH 2.7V PROM, PDSO8
W25X80AVDAIZ 1M X 8 FLASH 2.7V PROM, PDIP8
W25X80ALSSIG 1M X 8 FLASH 2.7V PROM, PDSO8
相关代理商/技术参数
参数描述
W25Q32FVSFIG 功能描述:IC FLASH SPI 32MBIT 16SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
W25Q32FVSSIG 制造商:Winbond Electronics Corp 功能描述:Flash Serial-SPI 3V/3.3V 32Mbit 4M x 8bit 8.5ns 8-Pin SOIC 制造商:Winbond Electronics Corp 功能描述:32MB F VERSIOB SPI FLASH 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 104MHZ 8SOIC
W25Q32FVSSIG TR 制造商:Winbond Electronics Corp 功能描述:IC FLASH 32MBIT 104MHZ 8SOIC
W25Q32FVSSIQ 制造商:Winbond Electronics Corp 功能描述:
W25Q32FVZPIG 功能描述:IC FLASH SPI 32MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(单线) 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商设备封装:8-MSOP 包装:带卷 (TR)