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参数资料
| 型号： | W25X20BVZPIG |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 1 FLASH 2.7V PROM, PDSO8 |
| 封装： | 6 X 5 MM, GREEN, WSON-8 |
| 文件页数： | 21/51页 |
| 文件大小： | 1632K |
| 代理商： | W25X20BVZPIG |
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W25X10BV/20BV/40BV
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9.2.16
Block Erase (D8h)
The Block Erase instruction sets all memory within a specified block (64K-bytes) to the erased state of
all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Block
Erase Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS
pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0) (see Figure
2). The Block Erase instruction sequence is shown in figure 16.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not
done the Block Erase instruction will not be executed. After /CS is driven high, the self-timed Block
Erase instruction will commence for a time duration of tBE (See AC Characteristics). While the Block
Erase cycle is in progress, the Read Status Register instruction may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the
cycle is finished and the device is ready to accept other instructions again. After the Block Erase cycle
has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase
instruction will not be executed if the addressed page is protected by the Block Protect (TB, BP2, BP1,
and BP0) bits (see Status Register Memory Protection table).
Figure 16. Block Erase Instruction Sequence Diagram
相关PDF资料 |
PDF描述 |
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| W7NCF04GH11CS4BG | 256M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF04GH11CS4EG | 256M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF04GH11CS7FG | 256M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
| W7NCF04GH11CS9CG | 256M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W25X20CLSNIG | 功能描述:IC FLASH SPI 2MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| W25X20CLSNIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 2MBIT 50MHZ 8SOIC |
| W25X20CLUXIG | 制造商:Winbond Electronics Corp 功能描述: |
| W25X20CLZPIG | 功能描述:IC FLASH SPI 2MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| W25X20CLZPIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 2MBIT 50MHZ 8WSON |
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