参数资料
型号: W29GL064CB7S
厂商: Winbond Electronics
文件页数: 7/68页
文件大小: 0K
描述: IC FLASH 64MBIT 70NS 48TSOP
标准包装: 96
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 64M(8M x 8,4M x 16)
速度: 70ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 48-TFSOP(0.724",18.40mm 宽)
供应商设备封装: 48-TSOP
包装: 管件

W29GL064C
1
GENERAL DESCRIPTION
The W29GL064C Parallel Flash memory provides a storage solution for embedded system
applications that require better performance, lower power consumption and higher density. This device
has a random access speed of 70 ns and a fast page access speed of 25 ns, as well as, significantly
faster program and erase times than the comparable products available on the market today. The
W29GL064C also offers special features such as Compatible Manufacturer ID that makes the device
industry standard compatible without the need to change firmware.
2
FEATURES
? 32k-Word/64k-Byte uniform sector
architecture
– Total 128 uniform sectors
– Total 127 uniform sectors + eight 4k-
Word/8k-Byte sectors
? 16-Word/32-Byte write buffer
– Reduces total program time for
multiple-word updates
? 8-Word/16-Byte page read buffer
? Secured Silicon Sector area
– Programmed and locked by the
customer or during production
– 128-word/256-byte sector for
permanent, safe identification using an
8-word/16-byte random electronic
serial number
? Enhanced Sector Protect using
Dynamic and Individual mechanisms
? Polling/Toggling methods are used to
detect the status of program and erase
operation
? Suspend and resume commands used
for program and erase operations
? More than 100,000 erase/program
cycles
? More than 20-year data retention
? Low power consumption
? Deep power down mode
? Faster Erase and Program time
– Erase is1.5x faster than industry
standard
– Program is 2x faster than industry
standard
– Allows for improved production
throughput and faster field updates
? CFI (Common Flash Interface) support
? Single 3V Read/Program/Erase (2.7 -
3.6V)
? Enhanced Variable IO control
– All input levels (address, control, and
DQ) and output levels are determined
by voltage on the E VIO input. E VIO
ranges from 1.65 to V CC
? #WP/ACC Input
– Accelerates programming time (when
V HH is applied) for greater throughput
during system production
– Protects first or last sector regardless
of sector protection settings
? Hardware reset input (#reset) resets
device
? Ready/#Busy output (RY/#BY) detects
completion of program or erase cycle
? Packages
– Uniform Sector (H/L)
56-pin TSOP
64-ball LFBGA
– Boot Sector (T/B)
?
Wide temperature range
48-pin TSOP
? Compatible manufacturer ID for drop-in
replacement
48-ball TFBGA
64-ball LFBGA
– No firmware change is required
Publication Release Date: August 2, 2013
1
Revision H
相关PDF资料
PDF描述
W29GL128CL9T IC FLASH 128MBIT 90NS 56TSOP
W631GG6KB-15 IC DDR3 SDRAM 1GBIT 96WBGA
W9412G6IH-5 IC DDR-400 SDRAM 128MB 66TSSOPII
W9412G6JH-5I IC DDR SDRAM 128MBIT 66TSOPII
W9425G6EH-5 IC DDR-400 SDRAM 256MB 66TSSOPII
相关代理商/技术参数
参数描述
W29GL064CH7B 制造商:WINBOND 制造商全称:Winbond 功能描述:64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
W29GL064CH7T 制造商:Winbond Electronics Corp 功能描述:IC FLASH 64MBIT 70NS 56TSOP
W29GL064CL7B 制造商:WINBOND 制造商全称:Winbond 功能描述:64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
W29GL064CL7T 制造商:WINBOND 制造商全称:Winbond 功能描述:64M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
W29GL064CT7A 功能描述:IC FLASH 64MBIT 70NS 48TFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6