参数资料
| 型号： | W29GL128CL9B |
| 厂商： | Winbond Electronics |
| 文件页数： | 13/67页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 128MBIT 90NS 64LFBGA |
| 标准包装： | 171 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 128M（16M x 8，8M x 16） |
| 速度： | 90ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LBGA |
| 供应商设备封装： | 64-LFBGA（11x13） |
| 包装： | 管件 |
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W29GL128C
7.2.3
Device Reset Operation
Pulling the #RESET pin Low for a period equal to or greater than t RP will return the device to Read
mode. If the device is performing a program or erase operation, the reset operation will take at most a
period of t READY1 before the device returns to Read mode. The RY/#BY pin will remain Low (Busy
Status) until the device returns to Read mode.
Note, the device draws larger current if the #RESET pin is held at voltages greater that GND+0.3V
and less than or equal to V IL . When the #RESET pin is held a GND±0.3V, the device only consumes
Reset (I CC 5) current.
It is recommended to tie the system reset signal to the #RESET pin of the flash memory. This allows
the device to be reset with the system and puts it in a state where the system can immediately begin
reading boot code from it.
Executing the Reset instruction will reset the device back to the Read mode in the following situations:
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7.2.4
During an erase instruction sequence, before the full instruction set is completed.
Sector erase time-out period
Erase failed, while DQ5 is High.
During program instruction sequence, before the full instruction set is completed, including the
erase-suspended program instruction.
Program failed, while DQ5 is High as well as the erase-suspended program failure.
Auto-select mode
CFI mode
The user must issue a reset instruction to reset the device back to the Read mode when the
device is in Auto-Select mode or CFI mode, or when there is a program or erase failure (DQ5
is High).
When the device is performing a Programming (not program fail) or Erasing (Not erase fail)
function, the device will ignore reset commands.
Standby Mode
Standby mode is entered when both #RESET and #CE are driven to V CC ±300mV (inactive state). At
this time output pins are placed in the high impedance state regardless of the state of the #WE or #OE
pins and the device will draw minimal standby current (I CC 4). If the device is deselected during erase
or program operation, the device will draw active current until the operation is completed.
7.2.5
Output Disable Mode
The #OE pin controls the state of the Data IO pins. If #OE is driven High (V IH ), all Data IO pins will
remain at high impedance and if driven Low, the Data IO pins will drive data ( #OE has no affect on
the RY/#BY output pin).
7.2.6
Write Operation
To execute a write operation, Chip Enable (#CE) pin is driven Low and the Output Enable (#OE) is
pulled high to disable the Data IO pins to a high impedance state. The desired address and data
should be present on the appropriate pins. Addresses are latched on the falling edge of either #WE or
#CE and Data is latched on the rising edge or either #CE or #WE. To see an example, please refer to
timing diagrams in Figure 8-5 , Figure 8-15 or Figure 8-16 . If an invalid write instruction, not defined in
this datasheet is written to the device, it may put the device in an undefined state.
Publication Release Date: August 2, 2013
7
Revision H
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W29GL128CL9B TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 64LFBGA |
| W29GL128CL9T | 功能描述:IC FLASH 128MBIT 90NS 56TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| W29GL128CL9T TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 56TSOP |
| W29NK50ZD | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 500 V - 0.11? - 29A TO-247 Fast Diode SuperMESH? MOSFET |
| W2A-1819 | 制造商:Nexans 功能描述:MULTI CONDUCTORS |
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