参数资料
| 型号： | W29GL128CL9B |
| 厂商： | Winbond Electronics |
| 文件页数： | 18/67页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 128MBIT 90NS 64LFBGA |
| 标准包装： | 171 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 128M（16M x 8，8M x 16） |
| 速度： | 90ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LBGA |
| 供应商设备封装： | 64-LFBGA（11x13） |
| 包装： | 管件 |
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W29GL128C
7.2.15 Buffer Write Abort
Write Buffer Programming Sequence will ABORT, if the following condition takes place:
?
?
?
?
The word count minus one loaded is bigger than the page buffer size (32) during, “Number of
Locations to Program.”
Sector Address written is not the same as the one specified during the Write-Buffer-Load
instruction.
If the Address/Data set is not inside the Write Buffer Page range which was set during cycle
5’s first initial write-buffer-page select address/data set.
No “Program Confirm Instruction” after the assigned number of “data load” cycles.
After Write Buffer Abort, the status register will be DQ1=1, DQ7 = DATA# (last address loaded),
DQ6=toggle, DQ5=0. This status represents a Write Buffer Programming Operation was ABORTED. A
Write-to-Buffer-Abort Reset instruction sequence has to be written to reset the device back to the read
array mode.
DQ1 is the bit for Buffer Write Abort. When DQ1=1, the device will abort from buffer write operation
and go back to read status register shown in the following table:
Status
Buffer Write Busy
Buffer Write Abort
Buffer Write Exceeded Time Limit
DQ7
DQ7#
DQ7#
DQ7#
DQ6
Toggle
Toggle
Toggle
DQ5
0
0
1
DQ3
N/A
N/A
N/A
DQ2
N/A
N/A
N/A
DQ1
0
1
0
RY/#BY
0
0
0
Table 7-8
Polling Buffer Write Abort Flag
7.2.16 Accelerated Programming Operation
The device will enter the Accelerated Programming mode by applying high voltage (V HH ) to the
#WP/ACC pin. Accelerated Programming mode allows the system to skip the normal unlock
sequences instruction and program byte/word locations directly. The current drawn from the
#WP/ACC pin during accelerated programming is no more than I ACC1 . Important Note: Do not exceed
10 accelerated programs per sector. (#WP/ACC should not be held at VHH for any other function
except for programming or damage to the device may occur.)
7.2.17 Automatic Select Bus Operation
There are basically two methods to access Automatic Selection Operations; Automatic Select
Instructions through software commands and High Voltage applied to A9. See Automatic Select
Instruction Sequence later on in this section for details of equivalent instruction operations that do not
require the use of V HH . The following five bus operations require A9 to be raised to V HH .
7.2.17.1
Sector Lock Status Verification
To verify the protected state of any sector using bus operations, execute a Read Operation with V HH
applied to A9, the sector address present on address pins A[22:12], address pins A6, A3, A2, and A0
held Low, and address pins A1 held High. If DQ0 is Low, the sector is considered not protected, and if
DQ0 is High, the sector is considered to be protected.
7.2.17.2
Read Silicon Manufacturer ID Code
Winbond’s 29GL family of Parallel Flash memories feature an Industry Standard compatible
Manufacturer ID code of 01h. To verify the Silicon Manufacturer ID code, execute a Read Operation
with VHH applied to the A9 pin and address pins A6, A3, A2, A1 and A0 are held Low. The ID code
can then be read on data bits DQ[7:0].
12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W29GL128CL9B TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 64LFBGA |
| W29GL128CL9T | 功能描述:IC FLASH 128MBIT 90NS 56TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| W29GL128CL9T TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 56TSOP |
| W29NK50ZD | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 500 V - 0.11? - 29A TO-247 Fast Diode SuperMESH? MOSFET |
| W2A-1819 | 制造商:Nexans 功能描述:MULTI CONDUCTORS |
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