参数资料
型号: W29GL128CL9B
厂商: Winbond Electronics
文件页数: 14/67页
文件大小: 0K
描述: IC FLASH 128MBIT 90NS 64LFBGA
标准包装: 171
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 128M(16M x 8,8M x 16)
速度: 90ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 64-LBGA
供应商设备封装: 64-LFBGA(11x13)
包装: 管件
W29GL128C
7.2.7
Byte/Word Selection
To choose between the Byte or Word mode, the #BYTE input pin is used to select how the data is
input/output on the Data IO pins and the organization of the array data. If the #BYTE pin is driven
High, Word mode will be selected and all 16 Data IO pins will be active. If the #BYTE is pulled Low,
Byte mode will be active and only Data IO DQ[7:0] will be active. The remaining Data IO pins
(DQ[14:8]) will be in a high impedance state and DQ15 becomes the A-1 address input pin.
7.2.8
Automatic Programming of the Memory Array
To program the memory array in Byte or Word mode, refer to the Instruction Definition Tables for
correct cycle defined instructions that include the 2 unlocking instruction cycles, the A0h program
cycle instruction and subsequent cycles containing the specified address location and the byte or word
desired data content, followed by the start of the embedded algorithm to automatically program the
array.
Once the program instruction sequence has been executed, the internal state machine commences
execution of the algorithms and timing necessary for programming and cell verification. Included in this
operation is generating suitable program pulses, checking cell threshold voltage (V T ) margins, and if
any cells do not pass verification or have acceptable margins, repetitive program pulse sequence will
be cycled again. The internal process mechanisms will protect cells that do pass margin and
verification tests from being over-programmed by prohibiting further program pulses to passing cells
as failing cells continue to be run through the internal programming sequence until the pass.
This feature allows the user to only perform the auto-programming sequence once and the device
state machine takes care of the program and verification process.
Array bits during programming can only change a bit status of “1” (erase state) to a “0” (programmed
state). It is not possible to do the reverse with a programming operation. This can only be done by first
performing an erase operation. Keep in mind, the internal write verification only checks and detects
errors in cases where a “1” is not successfully programmed to “0”.
During the embedded programming algorithm process any commands written to the device will be
ignored, except hardware reset or a program suspend instruction. Hardware reset will terminate the
program operation after a period of time, not to exceed 10μs. If in the case a Program Suspend was
executed, the device will enter the program suspend read mode. When the embedded program
algorithm is completed or the program is terminated by a hardware reset, the device will return to
Read mode.
The user can check for completion by reading the following bits in the status register, once the
embedded program operation has started:
Status
In progress
Exceeded time
DQ7
DQ7#
DQ7#
DQ6
Toggling
Toggling
DQ5
0
1
DQ1
0
N/A
RY/#BY 1
0
0
limit
Table 7-3
Note:
Polling During Embedded Program Operation
1.
RY/#BY is an open drain output pin and should be connected to VCC through a high value pull-up resistor.
8
相关PDF资料
PDF描述
W631GG6KB-12 IC DDR3 SDRAM 1GBIT 96WBGA
AMC20DRAS-S734 CONN EDGECARD 40POS .100 R/A PCB
FMC12DREI-S13 CONN EDGECARD 24POS .100 EXTEND
EPF6024AQC240-2N IC FLEX 6000 FPGA 24K 240-PQFP
EPF6024AQC240-2 IC FLEX 6000 FPGA 24K 240-PQFP
相关代理商/技术参数
参数描述
W29GL128CL9B TR 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 64LFBGA
W29GL128CL9T 功能描述:IC FLASH 128MBIT 90NS 56TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(单线) 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP,8-MSOP(0.118",3.00mm 宽) 供应商设备封装:8-MSOP 包装:带卷 (TR)
W29GL128CL9T TR 制造商:Winbond Electronics Corp 功能描述:IC FLASH 128MBIT 90NS 56TSOP
W29NK50ZD 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:N-CHANNEL 500 V - 0.11? - 29A TO-247 Fast Diode SuperMESH? MOSFET
W2A-1819 制造商:Nexans 功能描述:MULTI CONDUCTORS