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参数资料
| 型号： | W947D6HBHX6E |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 DDR DRAM, 5 ns, PBGA60 |
| 封装： | 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60 |
| 文件页数： | 13/60页 |
| 文件大小： | 1160K |
| 代理商： | W947D6HBHX6E |
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W947D6HB / W947D2HB
128Mb Mobile LPDDR
Publication Release Date:Jun,17, 2011
- 20 -
Revision A01-003
6.11.2 Truth Table - Commands
NAME (FUNCTION)
CS
RAS
CAS
WE
BA
A10/AP ADDR NOTES
DESELECT (NOP)
H
X
2
NO OPERATION (NOP)
L
H
X
2
ACTIVE (Select Bank and activate row)
L
H
Valid
Row
READ (Select bank and column and start read burst)
L
H
L
H
Valid
L
Col
READ with AP (Read Burst with Auto Precharge)
L
H
L
H
Valid
H
Col
3
WRITE (Select bank and column and start write burst)
L
H
L
Valid
L
Col
WRITE with AP (Write Burst with Auto Precharge)
L
H
L
Valid
H
Col
3
BURST TERMINATE or enter DEEP POWER DOWN
L
H
L
X
4, 5
PRECHARGE (Deactivate Row in selected bank)
L
H
L
Valid
L
X
6
PRECHARGE ALL (Deactivate rows in all banks)
L
H
L
X
H
X
6
AUTO REFRESH or enter SELF REFRESH
L
H
X
7, 8, 9
MODE REGISTER SET
L
Valid
Op-code
10
Notes:
1.
All states and sequences not shown are illegal or reserved.
2.
DESELECT and NOP are functionally interchangeable.
3.
Auto precharge is non-persistent. A10 High enables Auto precharge, while A10 Low disables Auto precharge.
4.
Burst Terminate applies to only Read bursts with Autoprecharge disabled. This command is undefined and should not be
used for Read with Auto precharge enabled, and for Write bursts.
5.
This command is BURST TERMINATE if CKE is High and DEEP POWER DOWN entry if CKE is Low.
6.
If A10 is low, bank address determines which bank is to be precharged. If A10 is high, all banks are precharged and
BA0~BA1 are dont care.
7.
This command is AUTO REFRESH if CKE is High and SELF REFRESH if CKE is low.
8.
All address inputs and I/O are dont care except for CKE. Internal refresh counters control bank and row addressing.
9.
All banks must be precharged before issuing an AUTO-REFRESH or SELF REFRESH command.
10.
BA0 and BA1 value select between MRS and EMRS.
11.
CKE is HIGH for all commands shown except SELF REFRESH and DEEP POWER-DOWN.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W947D6HBHX6G | 制造商:WINBOND 制造商全称:Winbond 功能描述:128Mb Mobile LPDDR |
| W948D2FB | 制造商:WINBOND 制造商全称:Winbond 功能描述:256Mb Mobile LPDDR |
| W948D2FBJX5E | 功能描述:IC LPDDR SDRAM 256MBIT 90VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G（256M x 16） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6 |
| W948D2FBJX5ETR | 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ |
| W948D2FBJX5I | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 256M-Bit 8Mx32 1.8V 90-Pin VFBGA 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
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