参数资料
型号: W947D6HBHX6E
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 8M X 16 DDR DRAM, 5 ns, PBGA60
封装: 8 X 9 MM, 0.80 MM PITCH, HALOGEN FREE AND LEAD FREE, VFBGA-60
文件页数: 22/60页
文件大小: 1160K
代理商: W947D6HBHX6E
W947D6HB / W947D2HB
128Mb Mobile LPDDR
Publication Release Date:Jun,17, 2011
- 29 -
Revision A01-003
During Read bursts, DQS is driven by the LPDDR SDRAM along with the output data. The initial Low state of the
DQS is known as the read preamble; the Low state coincident with last data-out element is known as the read post-
amble. The first data-out element is edge aligned with the first rising edge of DQS and the successive data-out
elements are edge aligned to successive edges of DQS. This is shown in following figure with a CAS latency of 2
and 3.
Upon completion of a read burst, assuming no other READ command has been initiated, the DQs will go to High-Z.
7.5.3 Read Burst Showing CAS Latency
CL=2
DO n
= Don't Care
BA Col n
READ
NOP
CK
Command
Address
DQS
DQ
DQS
DQ
1)DO n=Data Out from column n
2)BA,Col n =Bank A,Column n
3)Burst Length=4;3 subsequent elements of Data Out appear inthe programmed order following DO n
4)Shown with nominal tAC, tDQSCK and tDQSQ
CL=3
7.5.4 Read to Read
Data from a read burst may be concatenated or truncated by a subsequent READ command. The first data from the
new burst follows either the last element of a completed burst or the last desired element of a longer burst that is
being truncated. The new READ command should be issued X cycles after the first READ command, where X
equals the number of desired data-out element pairs (pairs are required by the 2n-prefetch architecture). This is
shown in following figure.
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相关代理商/技术参数
参数描述
W947D6HBHX6G 制造商:WINBOND 制造商全称:Winbond 功能描述:128Mb Mobile LPDDR
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W948D2FBJX5ETR 制造商:Winbond Electronics Corp 功能描述:256M MDDR, X32, 200MHZ
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