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参数资料
| 型号： | W9825G6JH-6I |
| 厂商： | Winbond Electronics |
| 文件页数： | 10/43页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 256MBIT 54TSOPII |
| 标准包装： | 200 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SDRAM |
| 存储容量： | 256M（16Mx16） |
| 速度： | 166MHz |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 54-TSOP II |
| 包装： | 托盘 |
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W9825G6JH
7.12 Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address which is input to
the device. The disturb address is varied by the Burst Length as shown in Table 2.
Table 2 Address Sequence of Sequential Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
ACCESS ADDRESS
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
BURST LENGTH
BL = 2 (disturb address is A0)
No address carry from A0 to A1
BL = 4 (disturb addresses are A0 and A1)
No address carry from A1 to A2
BL = 8 (disturb addresses are A0, A1 and A2)
No address carry from A2 to A3
7.13 Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit
in the sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
ACCESS ADDRESS
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
- 10 -
BURST LENGTH
BL = 2
BL = 4
BL = 8
Publication Release Date: Mar. 13, 2014
Revision: A09
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W986408CH | 制造商:WINBOND 制造商全称:Winbond 功能描述:2M x 8BIT x 4 BANKS SDRAM |
| W986408CH-75 | 制造商:WINBOND 制造商全称:Winbond 功能描述:x8 SDRAM |
| W986408CH-8H | 制造商:WINBOND 制造商全称:Winbond 功能描述:x8 SDRAM |
| W986416CH | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M x 16 BIT x 4 BANKS SDRAM |
| W986416CH-6 | 制造商:WINBOND 制造商全称:Winbond 功能描述:x16 SDRAM |
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