参数资料
型号: W9825G6JH-6I
厂商: Winbond Electronics
文件页数: 15/43页
文件大小: 0K
描述: IC SDRAM 256MBIT 54TSOPII
标准包装: 200
格式 - 存储器: RAM
存储器类型: SDRAM
存储容量: 256M(16Mx16)
速度: 166MHz
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 54-TSOP(0.400",10.16mm 宽)
供应商设备封装: 54-TSOP II
包装: 托盘
W9825G6JH
9.4
DC Characteristics
( V DD = 3.3V ± 0.3V , T A = 0 to 70°C for -5/-6/-6L/-75/75L , T A = -40 to 85°C for -5I/-6I/-6A, T A / T CASE = -40 to 105°C for -6K)
PARAMETER
SYM.
-5/-5I
MAX.
-6/-6I/-6A
MAX.
-6K
MAX.
-6L
MAX.
-75
MAX.
75L
MAX.
UNIT
NOTES
Operating Current
t CK = min., t RC = min.
Active precharge command
1 Bank
operation
I DD1
65
60
60
60
55
55
3
cycling without burst
operation
Standby Current
t CK = min., CS = V IH
CKE = V IH
I DD2
30
25
25
25
20
20
3
V IH/L = V IH (min.)/V IL (max.)
Bank: Inactive state
CKE = V IL
(Power Down Mode)
I DD2P
2
2
5
2
2
2
3
Standby Current
CLK = V IL , CS = V IH
CKE = V IH
I DD2S
12
12
12
12
12
12
V IH/L =V IH (min.)/V IL (max.)
Bank: Inactive state
No Operating Current
t CK = min., CS = V IH (min)
Bank: Active state (4 Banks)
CKE = V IL
(Power Down Mode)
CKE = V IH
CKE = V IL
(Power Down Mode)
I DD2PS
I DD3
I DD3P
2
40
12
2
35
12
5
35
15
2
35
12
2
30
12
2
30
12
mA
Burst Operating Current
t CK = min.
I DD4
85
80
80
80
75
75
3, 4
Read/ Write command cycling
Auto Refresh Current
t CK = min.
I DD5
80
75
75
75
70
70
3
Auto refresh command cycling
Self Refresh Current
Self Refresh Mode
I DD6
2
2
5
1.5
2
1.5
CKE = 0.2V
PARAMETER
Input Leakage Current
(0V ? V IN ? V DD , all other pins not under test = 0V)
Output Leakage Current
(Output disable, 0V ? V OUT ? V DDQ )
LVTTL Output “ H ” Level Voltage
(I OUT = -2 mA )
LVTTL Output “L” Level Voltage
(I OUT = 2 mA )
SYMBOL
I I(L)
I O(L)
V OH
V OL
MIN.
-5
-5
2.4
-
MAX.
5
5
-
0.4
UNIT
μA
μA
V
V
NOTES
Publication Release Date: Mar. 13, 2014
- 15 -
Revision: A09
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