- 您现在的位置：买卖IC网 > PDF目录69541 > W9864G6EB-7 (WINBOND ELECTRONICS CORP) 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60 PDF资料下载
参数资料
| 型号： | W9864G6EB-7 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60 |
| 封装： | 0.65 MM PITCH, ROHS COMPLIANT, VFBGA-60 |
| 文件页数： | 12/47页 |
| 文件大小： | 1136K |
| 代理商： | W9864G6EB-7 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页当前第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页
W986416EB/W9864G6EB
- 2 -
12.
DC CHARACTERISTICS.......................................................................................................... 15
13.
RECOMMENDED DC OPERATING CONDITIONS................................................................. 15
14.
AC CHARACTERISTICS .......................................................................................................... 16
15.
TIMING WAVEFORMS ............................................................................................................. 19
15.1
Command Input Timing ................................................................................................ 19
15.2
Read Timing.................................................................................................................. 20
15.3
Control Timing of Input Data......................................................................................... 21
15.4
Control Timing of Output Data...................................................................................... 22
15.5
Mode Register Set Cycle .............................................................................................. 23
16.
OPERATING TIMING EXAMPLE ............................................................................................. 24
16.1
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3)...................................... 24
16.2
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Autoprecharge)............ 25
16.3
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3)...................................... 26
16.4
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Autoprecharge)............ 27
16.5
Interleaved Bank Write (Burst Length = 8) ................................................................... 28
16.6
Interleaved Bank Write (Burst Length = 8, Autoprecharge) ......................................... 29
16.7
Page Mode Read (Burst Length = 4, CAS Latency = 3) .............................................. 30
16.8
Page Mode Read/Write (Burst Length = 8, CAS Latency = 3)..................................... 31
16.9
Autoprecharge Read (Burst Length = 4, CAS Latency = 3) ......................................... 32
16.10
Autoprecharge Write (Burst Length = 4) ..................................................................... 33
16.11
Autorefresh Cycle........................................................................................................ 34
16.12
Self-refresh Cycle........................................................................................................ 35
16.13
Bust Read and Single Write (Burst Length = 4, CAS Latency = 3)............................. 36
16.14
Power-down Mode ...................................................................................................... 37
16.15
Auto-precharge Timing (Write Cycle).......................................................................... 38
16.16
Auto-precharge Timing (Read Cycle) ......................................................................... 39
16.17
Timing Chart of Read to Write Cycle........................................................................... 40
16.18
Timing Chart of Write to Read Cycle........................................................................... 41
16.19
Timing Chart of Burst Stop Cycle (Burst Stop Command).......................................... 42
16.20
CKE/DQM Input Timing (Write Cycle)......................................................................... 43
16.21
CKE/DQM Input Timing (Read Cycle)......................................................................... 44
16.22
Self Refresh/Power Down Mode Exit Timing .............................................................. 45
17.
PACKAGE DIMENSIONS......................................................................................................... 46
17.1
VFBGA 60 balls pitch=0.65mm .................................................................................... 46
18.
VERSION HISTORY .................................................................................................................47
相关PDF资料 |
PDF描述 |
|---|---|
| WE128K8200CQ | 128K X 8 EEPROM 5V MODULE, 200 ns, CDIP32 |
| WED9LC6816V1512BI | SPECIALTY MEMORY CIRCUIT, PBGA153 |
| WS128K32-35G2TMEA | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| WS128K32-55G2TIE | 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 |
| WS128K32-35G2TIE | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9864G6GH | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 16 BITS SDRAM |
| W9864G6GH-5 | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 16 BITS SDRAM |
| W9864G6GH-6 | 制造商:Winbond Electronics Corp 功能描述:4*16BIT SDRAM |
| W9864G6GH-6I | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 16 BITS SDRAM |
| W9864G6GH-7 | 制造商:Winbond Electronics Corp 功能描述:64M 3.3V SDRAM 4M X 16 |
发布紧急采购，3分钟左右您将得到回复。