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| 型号： | WED9LC6816V1512BI |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA153 |
| 封装： | MO-163, BGA-153 |
| 文件页数： | 1/27页 |
| 文件大小： | 370K |
| 代理商： | WED9LC6816V1512BI |
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED9LC6816V
January 2001
DESCRIPTION
The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline
SRAM and a 4Mx32 Synchronous DRAM array constructed with
one 256K x 32 SBSRAM and two 4Mx16 SDRAM die mounted on
a multilayer laminate substrate. The device is packaged in a 153
lead, 14mm by 22mm, BGA.
The WED9LC6816V provides a total memory solution for the
Texas Instruments TMS320C6201 and the TMS320C6701 DSPs
The Synchronous Pipeline SRAM is available with clock speeds
of 200, 166,150, and 133 MHz, allowing the user to develop a fast
external memory for the SSRAM interface port .
The SDRAM is available in clock speeds of 125 and 100 MHz,
allowing the user to develop a fast external memory for the
SDRAM interface port.
The WED9LC6816V is available in both commercial and industrial
temperature ranges.
256Kx32 SSRAM/4Mx32 SDRAM
External Memory Solution for Texas Instruments TMS320C6000 DSP
FEATURES
s Clock speeds:
SSRAM: 200, 166,150, and 133 MHz
SDRAMs: 125 and 100 MHz
s DSP Memory Solution
Texas Instruments TMS320C6201
Texas Instruments TMS320C6701
s Packaging:
153 pin BGA, JEDEC MO-163
s 3.3V Operating supply voltage
s Direct control interface to both the SSRAM and SDRAM ports
on the “C6x”
s Common address and databus
s 65% space savings vs. monolithic solution
s Reduced system inductance and capacitance
FIG. 1 PIN CONFIGURATION
12
345
6
789
A
DQ19
DQ23
VCC
VSS
VCC
DQ24
DQ28
A
B
DQ18
DQ22
VCC
VSS
SDCE
VSS
VCC
DQ25
DQ29
B
C
VCCQ
VCC
SDWE
SDA10
NC
VCC
VCCQ
C
D
DQ17
DQ21
VCC
VSS
VCC
DQ26
DQ30
D
E
DQ16
DQ20
VCC
VSS
SDCLK
VSS
VCC
DQ27
DQ31
E
F
VCCQ
VCC
VSS
VCC
VCCQ
F
G
NC
SDRAS SDCAS
VSS
A2
A4
A5
G
H
NC
A8
VSS
NC
A1
A3
A10
H
J
A6
A7
A9
VSS
NC
A0
A11
A12
J
K
A17
NC / A18 NC / A19
VSS
NC
A13
A14
K
L
NC
BWE2
BWE3
NC
A15
A16
L
M
VCCQ
VCC
BWE0
BWE1
NC
VCC
VCCQ
M
N
DQ12
DQ11
VCC
VSS
VCC
DQ4
DQ0
N
P
DQ13
DQ10
VCC
VSS
SSCLK
VSS
VCC
DQ5
DQ1
P
R
VCCQ
VCC
VSS
VCC
VCCQ
R
T
DQ14
DQ9
VCC
SSADC SSWE
NC
VCC
DQ6
DQ2
T
U
DQ15
DQ8
VCC
SSOE
SSCE
NC
VCC
DQ7
DQ3
U
12
345
6
789
TOP VIEW
A0-17
Address Bus
DQ0-31
Data Bus
SSCLK
SSRAM Clock
SSADC
SSRAM Address Status Control
SSWE
SSRAM Write Enable
SSOE
SSRAM Output Enable
SDCLK
SDRAM Clock
SDRAS
SDRAM Row Address Strobe
SDCAS
SDRAM Column Address Strobe
SDWE
SDRAM Write Enable
SDA10
SDRAM Address 10/auto precharge
BWE0-3
SSRAM Byte Write Enables
SDRAM SDQM 0 - 3
SSCE
Chip Enable SSRAM Device
SDCE
Chip Enable SDRAM Device
VCC
Power Supply pins, 3.3V
VCCQ
Data Bus Power Supply pins,
3.3V (2.5V future)
VSS
Ground
NC
No Connect
PIN DESCRIPTION
Advanced*
* This data sheet describes a product that may or may not be under development and
is subject to change or cancellation without notice.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WED9LC6816V1610BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM |
| WED9LC6816V1610BI | 制造商:White Electronic Designs 功能描述:Res Thin Film 2010 196 Ohm 0.25% 1/4W ±10ppm/°C Molded SMD Plastic T/R 制造商:White Electronic Designs 功能描述:256KX32 SSRAM/ 4MX32 SDRAM |
| WED9LC6816V1612BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM |
| WED9LC6816V1612BI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM |
| WED9LC6816V2010BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM |
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