参数资料
型号: WED9LC6816V1512BI
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA153
封装: MO-163, BGA-153
文件页数: 17/27页
文件大小: 370K
代理商: WED9LC6816V1512BI
24
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED9LC6816V
January 2001
FIG. 15 SDRAM BURST READ SINGLE BIT WRITE CYCLE @ BURST LENGTH = 2
CBc
CAd
RBb
CAa
RAa
CL = 2
Row Active
(A-Bank)
Read
(A-Bank)
Row Active
(B-Bank)
Write with
Auto Precharge
(B-Bank)
Precharge
(Both Banks)
Write
(A-Bank)
Read with
Auto Precharge
(A-Bank)
Row Active
(A-Bank)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
RAa
QAb0
QAb1
DBc0
QAd0
QAd1
DAa0
DON’T CARE
CAb
Note 2
RBb
RAc
CL = 3
DQ
QAb0
QAb1
DBc0
QAd0
QAd1
DAa0
SDRAS
SDCAS
ADDR
BA
BWE
SDA10
SDCLK
SDCE
SDWE
NOTES:
1. BRSW modes enabled by setting A9 “High” at MRS (Mode Register Set).
At the BRSW Mode, the burst length at Write is fixed to “1” regardless of programmed burst length.
2. When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated. Auto precharge is executed at the burst-end cycle,
so in the case of BRSW write command, the next cycle starts the precharge.
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