参数资料
型号: WED9LC6816V1512BI
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA153
封装: MO-163, BGA-153
文件页数: 15/27页
文件大小: 370K
代理商: WED9LC6816V1512BI
22
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED9LC6816V
January 2001
FIG. 13 SDRAM READ INTERRUPTED BY PRECHARGE COMMAND & READ BURST STOP @
BURST LENGTH = FULL PAGE
CAb
CAa
RAa
CL = 2
Precharge
(A-Bank)
Read
(A-Bank)
Burst Stop
Read
(A-Bank)
Row Active
(A-Bank)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
DON’T CARE
RAa
QAa0
QAa1
QAa2
QAa3
QAa4
QAb1
QAb0
QAb3
QAb2
QAb5
QAb4
CL = 3
DQ
QAa0
QAa1
QAa2
QAa3
QAa4
QAb1
QAb0
QAb3
QAb2
QAb5
QAb4
Note 2
1
2
SDRAS
SDCAS
ADDR
BA
BWE
SDA10
SDCLK
SDCE
SDWE
NOTES:
1. At full page mode, burst is end at the end of burst. So auto precharge is possible.
2. About the valid DQs after burst stop, it is the same as the case of SDRAS interrupt. Both cases are illustrated in the above timing diagram. See the label 1, 2 on
each of them. But at burst write, burst stop and SDRAS interrupt should be compared carefully. Refer to the timing diagram of “Full page write burst stop cycle”.
3. Burst stop is valid at every burst length.
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