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参数资料
| 型号： | WED9LC6816V1512BI |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA153 |
| 封装： | MO-163, BGA-153 |
| 文件页数： | 3/27页 |
| 文件大小： | 370K |
| 代理商： | WED9LC6816V1512BI |
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11
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED9LC6816V
January 2001
L
OP Code
Mode Register Set
Set the Mode Register
1
L
H
X
Auto or Self Refresh
Start Auto
1
L
H
L
X
Precharge
No Operation
L
H
BA
Row Address
Bank Activate
Activate the specified bank and row
Idle
L
H
L
BA
Column
Write w/o Precharge
ILLEGAL
2
L
H
L
H
BA
Column
Read w/o Precharge
ILLEGAL
1
L
H
L
X
Burst Termination
No Operation
1
L
H
X
No Operation
H
X
Device Deselect
No Operation
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
3
L
H
BA
Row Address
Bank Activate
ILLEGAL
1
Row Active
L
H
L
BA
Column
Write
Start Write; Determine if Auto Precharge
4,5
L
H
L
H
BA
Column
Read
Start Read; Determine if Auto Precharge
4,5
L
H
L
X
Burst Termination
No Operation
L
H
X
No Operation
H
X
Device Deselect
No Operation
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
Terminate Burst; Start the Precharge
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Read
L
H
L
BA
Column
Write
Terminate Burst; Start the Write cycle
5,6
L
H
L
H
BA
Column
Read
Terminate Burst; Start a new Read cycle
5,6
L
H
L
X
Burst Termination
Terminate the Burst
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
Terminate Burst; Start the Precharge
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Write
L
H
L
BA
Column
Write
Terminate Burst; Start a new Write cycle
5,6
L
H
L
H
BA
Column
Read
Terminate Burst; Start the Read cycle
5,6
L
H
L
X
Burst Termination
Terminate the Burst
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto or Self Refresh
ILLEGAL
L
H
L
X
Precharge
ILLEGAL
2
Read with
L
H
BA
Row Address
Bank Activate
ILLEGAL
2
Auto Precharge
L
H
L
BA
Column
Write
ILLEGAL
L
H
L
H
BA
Column
Read
ILLEGAL
L
H
L
X
Burst Termination
ILLEGAL
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
SDRAM CURRENT STATE TRUTH TABLE
Current State
Command
Action
Notes
SDCE
SDRAS
SDCAS
SDWE
(BA)
A11-A0
Description
A12 & A13
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WED9LC6816V1610BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM |
| WED9LC6816V1610BI | 制造商:White Electronic Designs 功能描述:Res Thin Film 2010 196 Ohm 0.25% 1/4W ±10ppm/°C Molded SMD Plastic T/R 制造商:White Electronic Designs 功能描述:256KX32 SSRAM/ 4MX32 SDRAM |
| WED9LC6816V1612BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM |
| WED9LC6816V1612BI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM |
| WED9LC6816V2010BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM |
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