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参数资料
型号： WED9LC6816V1512BI
元件分类： 存储器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA153
封装： MO-163, BGA-153
文件页数： 22/27页
文件大小： 370K
代理商： WED9LC6816V1512BI
4
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED9LC6816V
January 2001
RECOMMENDED DC OPERATING CONDITIONS
(VCC = 3.3V -5% / +10% unless otherwise noted;
0
°C ≤ TA ≤ 70°C, Commercial; -40°C ≤ TA ≤ 85°C, Industrial)
ABSOLUTE MAXIMUM RATINGS
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in operational
sections of this specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Voltage on Vcc Relative to Vss
-0.5V to +4.6V
Vin (DQx)
-0.5V to Vcc +0.5V
Storage Temperature (BGA)
-55
°C to +125°C
Junction Temperature
+150
°C
Short Circuit Output Current
100 mA
Parameter
Symbol
Min
Max
Units
Supply Voltage (1)
VCC
3.135
3.6
V
Input High Voltage (1,2)
VIH
2.0
VCC +0.3
V
Input Low Voltage (1,2)
VIL
-0.3
0.8
V
Input Leakage Current
ILI
-10
10
A
0
≤ VIN ≤ Vcc
Output Leakage (Output Disabled)
ILo
-10
10
A
0
≤ VIN ≤ Vcc
Output High (IOH = -4mA) (1)
VOH
2.4
—
V
Output Low (IOL = 8mA) (1)
VOL
—
0.4
V
NOTES:
1. All voltages referenced to Vss (GND).
2. Overshoot:
VIH
≤ +6.0V for t ≤ tKC/2
Underershoot:
VIL
≥ -2.0V for t ≤ tKC/2
DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V -5% / +10% unless otherwise noted; 0
°C ≤ TA ≤ 70°C, Commercial; -40°C ≤ TA ≤ 85°C, Industrial)
Description
Conditions
Symbol
Frequency
Typ
Max
Units
Power Supply Current:
133MHz
500
625
Operating (1,2,3)
SSRAM Active / DRAM Auto Refresh
Icc1
150MHz
500
650
mA
166MHz
550
700
200MHz
600
800
Power Supply Current
133MHz
325
425
Operating (1,2,3)
SSRAM Active / DRAM Idle
Icc2
150MHz
350
450
mA
166MHz
400
495
200MHz
450
585
Power Supply Current
83MHz
240
270
Operating (1,2,3)
SDRAM Active / SSRAM Idle
Icc3
100MHz
250
290
mA
125MHz
275
320
SSCE and SDCE
≤ Vcc -0.2V,
ISB1
20.0
40.0
CMOS Standby
All other inputs at Vss +0.2
≤ VIN or
mA
VIN
≤ VCC -0.2V, Clk frequency = 0
SSCE and SDCE
≤ VIH min
ISB2
30.0
55.0
TTL Standby
All other inputs at VIL max
≤ VIN or
mA
VIN
≤ VCC -0.2V, Clk frequency = 0
Auto Refresh
Icc5
250
300
mA
NOTES:
1. ICC (operating) is specified with no output current. ICC (operating) increases with faster cycle times and greater output loading.
2. "Device idle" means device is deselected (CE
≥ VIH) Clock is running at max frequency and Addresses are switching each cycle.
3. Typical values are measured at 3.3V, 25
°C. ICC (operating) is specified at specified frequency.
Description
Conditions
Symbol
Typ
Max
Units
Address Input Capacitance (1)
TA = 25
°C; f = 1MHz
CI
58
pF
Input/Output Capacitance (DQ) (1)
TA = 25
°C; f = 1MHz
CO
810
pF
Control Input Capacitance (1)
TA = 25
°C; f = 1MHz
CA
58
pF
Clock Input Capacitance (1)
TA = 25
°C; f = 1MHz
CCK
46
pF
NOTE:
1. This parameter is sampled.
BGA CAPACITANCE
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