参数资料
型号: W9864G6IH-6A
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
封装: 0.400 INCH, ROHS COMPLIANT, TSOP2-54
文件页数: 31/44页
文件大小: 666K
代理商: W9864G6IH-6A
W9864G6IH
Publication Release Date: Mar. 22, 2010
- 37 -
Revision A11
11.16 Auto-precharge Timing (Read Cycle)
Read
AP
0
11
10
9
8
7
6
5
4
3
2
1
Q0
Read
AP
Act
Q1
Read
AP
Act
Q1
Q2
AP
Act
Read
Act
Q0
Q3
(1) CAS Latency=2
Read
Act
AP
When the Auto precharge command is asserted, the period from Bank Activate command to
the start of internal precgarging must be at least tRAS(min).
represents the Read with Auto precharge command.
represents the start of internal precharging.
represents the Bank Activate command.
Note )
tRP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
tRP
( a ) burst length = 1
Command
( b ) burst length = 2
Command
( c ) burst length = 4
Command
( d ) burst length = 8
Command
DQ
Q0
Read
AP
Act
Q0
Read
AP
Act
Q1
Q0
Read
AP
Act
Q1
Q2
Q3
Read
AP
Act
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
(2) CAS Latency=3
tRP
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相关代理商/技术参数
参数描述
W9864G6IH-6I 制造商:Winbond Electronics Corp 功能描述:DRAM Chip SDRAM 64M-Bit 4Mx16 3.3V
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