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参数资料
| 型号： | WED9LAPC2C16V8BC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | 存储器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA192 |
| 封装： | 21 X 21 MM, BGA-192 |
| 文件页数： | 13/24页 |
| 文件大小： | 933K |
| 代理商： | WED9LAPC2C16V8BC |
20
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED9LAPC2C16V8BC
July, 2000
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specications without notice.
FIG. 13 SDRAM WRITE INTERRUPTED BY PRECHARGE COMMAND & WRITE BURST STOP
@ BURST LENGTH = FULL PAGE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
GCK
VCRAS#
VCCAS#
VCADDR
VCBS
VCADDR9/AP
VCDATA
VCWE#
VCDQM#
Row Active
(A-Bank)
Write
(A-Bank)
Write
(A-Bank)
Burst Stop
Precharge
(A-Bank)
DON’T CARE
RAa
CAa
CAb
RAa
tRDL
Note 2
tBDL
DAb0
DAb1
DAb2
DAb3
DAb4
DAb5
DAa0
DAa1
DAa2
DAa3
DAa4
Notes:
1.
At full page mode, burst is end at the end of burst. So auto precharge is possible.
2.
Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is dened by AC parameter of tRDL.
VCDQM# at write interrupt by precharge command is needed to prevent invalid write.
VCDQM# should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be
masked internally.
3.
Burst stop is valid at every burst length.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WED9LAPC2C16V8BI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512K x 32 SSRAM / 1M x 64 SDRAM |
| WED9LAPC3C16V8BC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512K x 32 SSRAM / 1M x 64 SDRAM |
| WED9LAPC3C16V8BI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:512K x 32 SSRAM / 1M x 64 SDRAM |
| WED9LC6416V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
| WED9LC6416V1310BC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128Kx32 SSRAM/4Mx32 SDRAM |
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