参数资料
型号: WED9LAPC2C16V8BC
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA192
封装: 21 X 21 MM, BGA-192
文件页数: 18/24页
文件大小: 933K
代理商: WED9LAPC2C16V8BC
3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED9LAPC2C16V8BC
July, 2000
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specications without notice.
RECOMMENDED DC OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
*Stress greater than those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in operational sections of this specications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Voltage on VCC Relative to VSS
-0.5V to +4.6V
Vin (DQx)
-0.5V to Vcc +0.5V
Storage Temperature (BGA)
-55°C to +125°C
Junction Temperature
+125°C
Short Circuit Output Current
50 mA
DC ELECTRICAL CHARACTERISTICS
BGA CAPACITANCE
Description
Conditions
Symbol
Typ
Max
Units
Operating Current
CRAM and VCRAM active
ICC1
400
500
mA
Operating Current
CRAM active/VCRAM inactive
ICC2
350
390
mA
Operating Current
CRAM inactive/VCRAM active
ICC3
270
330
mA
Operating Current
CRAM inactive/VCRAM inactive
ICC4
150
180
mA
SSRAM AC CHARACTERISTICS
Parameter
Symbol
Min
Max
Units
Clock Cycle Time
tKHKH
7.5
ns
Clock HIGH Time
tKLKH
3.0
ns
Clock LOW Time
tKHKL
3.0
ns
Clock to output valid
tKHQV
4.2
ns
Clock to output invalid
tKHQX
1.5
ns
Clock to output in Low-Z
tKQLZ
1.5
ns
Clock to output in High-Z
tKQHZ
1.5
3.5
ns
Output Enable to output valid
tOELQV
4.2
ns
Output Enable to output in Low-Z
tOELZ
0
ns
Output Enable to output in High-Z
tOEHZ
3.5
ns
Address, Control, Data-in Setup Time to Clock
tS
1.5
ns
Address, Control, Data-in Hold Time to Clock
tH
0.5
ns
Parameter
Symbol
Min
Max
Units
Supply Voltage (1)
VCC
3.135
3.465
V
Input High Voltage (1,2)
VIH
2.0
VCC +0.3
V
Input Low Voltage (1,2)
VIL
-0.3
0.8
V
Input Leakage Current
0 - VIN - Vcc
ILI
-10
10
A
Output Leakage (Output Disabled)
0 - VIN - Vcc
ILO
-10
10
A
CRAM Output High (IOH = -4mA) (1)
VOH
2.4
V
CRAM Output Low (IOL = 8mA) (1)
VOL
0.4
V
VCRAM Output High (IOH = -2mA) (1)
VOH
2.4
V
VCRAM Output Low (IOL = 2mA) (1)
VOL
0.4
V
Description
Conditions
Symbol
Typ
Max
Units
Address Input Capacitance1
TA = 25°C; f = 1MHz
CI
5
8
pF
Input/Output Capacitance (DQ)1
TA = 25°C; f = 1MHz
CO
8
10
pF
Control Input Capacitance1
TA = 25°C; f = 1MHz
CA
5
8
pF
Clock Input Capacitance1
TA = 25°C; f = 1MHz
CCK
4
6
pF
(0°C ≤ TA ≤ 70°C; VCC = 3.3V ± 5% unless otherwise noted)
NOTES:
1.
All voltages referenced to VSS (GND).
2.
Overshoot: VIH ≤ +6.0V for t ≤ tKC/2
Undershoot: VIL ≥ -2.0V for t ≤ tKC/2
NOTE:
1.
This parameter is sampled.
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