参数资料
型号: WED9LAPC2C16V8BC
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA192
封装: 21 X 21 MM, BGA-192
文件页数: 7/24页
文件大小: 933K
代理商: WED9LAPC2C16V8BC
15
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED9LAPC2C16V8BC
July, 2000
Rev. 0
White Electronic Designs Corp. reserves the right to change products or specications without notice.
FIG. 8 SDRAM PAGE READ CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
GCK
VCRAS#
VCCAS#
VCADDR
VCBS
VCADDR9/AP
VCDATA
VCWE#
VCDQM#
CL = 2
CL = 3
Row Active
(A-Bank)
Row Active
(B-Bank)
Read
(A-Bank)
Read
(A-Bank)
Read
(A-Bank)
Read
(B-Bank)
Read
(B-Bank)
Precharge
(A-Bank)
DON’T CARE
Note 1
RAa
CAa
CBb
CBd
CAc
CAe
RBb
RAa
QAa0
QAa1
QAa2
QAa3
QBb0
QBb1
QBb2
QBb3
QAc0
QAc1
QBd0
QBd1
QAe0
QAe1
QAa0
QAa1
QAa2
QAa3
QBb0
QBb1
QBb2
QBb3
QAc0
QAc1
QBd0
QBd1
QAe0
QAe1
Note:
1.
To interrupt a burst read by Row precharge, both the read and the precharge banks must be the same.
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